Fabrication of InAs/GaAs quantum dot solar cells with enhanced photocurrent and without degradation of open circuit voltage

Guimard, Denis; Morihara, Ryo; Bordel, Damien; Tanabe, Katsuaki; Wakayama, Yuki; Nishioka, Masao; Arakawa, Yasuhiko
May 2010
Applied Physics Letters;5/17/2010, Vol. 96 Issue 20, p203507
Academic Journal
We report the fabrication of InAs/GaAs quantum dot solar cells (QDSCs) with enhanced photocurrent and no degradation in open circuit voltage (VOC) compared to a solar cell grown without QDs and composed solely of wetting layers. Notably, the achievement of such high VOC does not require electronic coupling. We report QDSCs with a light absorption range extended up to 1.3 μm and evidence a trade-off between VOC and QD ground-state energy. These results are of major significance to the design of high efficiency QDSCs.


Related Articles

  • Registration of single quantum dots using cryogenic laser photolithography. Lee, Kwan H.; Green, Alex M.; Taylor, Robert A.; Sharp, David N.; Scrimgeour, Jan; Roche, Olivia M.; Na, Jong H.; Jarjour, Anas F.; Turberfield, Andrew J.; Brossard, Frederic S. F.; Williams, David A.; Briggs, G. Andrew D. // Applied Physics Letters;5/8/2006, Vol. 88 Issue 19, p193106 

    We have registered the position of single InGaAs quantum dots using a cryogenic laser photolithography technique. This is an important advance towards the reproducible fabrication of solid-state cavity quantum electrodynamic devices, a key requirement for commercial exploitation of quantum...

  • Metal grid/conducting polymer hybrid transparent electrode for inverted polymer solar cells. Jingyu Zou; Hin-Lap Yip; Hau, Steven K.; Jen, Alex K.-Y. // Applied Physics Letters;5/17/2010, Vol. 96 Issue 20, p203301 

    A simple method was developed using metal grid/conducting polymer hybrid transparent electrode to replace indium tin oxide (ITO) for the fabrication of inverted structure polymer solar cells. The performance of the devices could be tuned easily by varying the width and separation of the metal...

  • Photovoltaic Characteristics of Fabricated Carbon Based P-C/N-Si Hetero-Junction Solar Cells. Rusop, M. // AIP Conference Proceedings;6/1/2009, Vol. 1136 Issue 1, p651 

    The opto-electrical properties and photovoltaic characteristics of fabricated carbon based p-C/n-Si hetero-junction solar cells are reported. The cells performances have been given in the dark I-V rectifying curve and I-V working curve under illumination when exposed to AM 1.5 illumination...

  • Thin metal oxide films to modify a window layer in CdTe-based solar cells for improved performance. Lemmon, John P.; Polikarpov, Evgueni; Bennett, Wendy D.; Kovarik, Libor // Applied Physics Letters;5/21/2012, Vol. 100 Issue 21, p213908 

    We report on CdS/CdTe photovoltaic devices containing a thin Ta2O5 film deposited onto the CdS window layer. For thicknesses below 5 nm, Ta2O5 films between CdS and CdTe improve the solar cell performance despite the insulating nature of the interlayer material. Using the Ta2O5 interlayer, an...

  • Quantum dot solar cells. Aroutiounian, V.; Petrosyan, S.; Khachatryan, A.; Touryan, K. // Journal of Applied Physics;2/15/2001, Vol. 89 Issue 4, p2268 

    The quantum dot solar cell concept is proposed as a scheme for increased solar cell efficiency. A theoretical model is presented for a practical p-i-n quantum dot solar cell, based on the self-organized InAs/GaAs system. The advantages of using the quantum dot in the active region for photon...

  • Strong normal-incidence infrared absorption in self-organized InAs/InAlAs quantum dots grown on... Weber, A.; Gauthier-Lafaye, O.; Julien, F.H.; Brault, J.; Gendry, M.; Desieres, Y.; Benyattou, T. // Applied Physics Letters;1/18/1999, Vol. 74 Issue 3, p413 

    Reports on the fabrication of InAs self-assembled quantum dots in InAlAs matrix grown on InP(001) substrates using Stranski-Krastanov growth mode. In-plane polarized intraband absorption observed in the 10.6-20 micrometer wavelength region; Oscillator strength of the intraband transition;...

  • Optimum nitride concentration in multiband III-N–V alloys for high efficiency ideal solar cells. Cánovas, E.; Martí, A.; Luque, A.; Walukiewicz, W. // Applied Physics Letters;10/27/2008, Vol. 93 Issue 17, p174109 

    III-Nx–V1-x highly mismatched alloys (HMAs) have been proposed as promising material candidates for the development of high efficiency solar cells. According to the band anticrossing model, these alloys present a multiband character with an intermediate band within the otherwise...

  • Suppression of thermal carrier escape and efficient photo-carrier generation by two-step photon absorption in InAs quantum dot intermediate-band solar cells using a dot-in-well structure. Asahi, S.; Teranishi, H.; Kasamatsu, N.; Kada, T.; Kaizu, T.; Kita, T. // Journal of Applied Physics;2014, Vol. 116 Issue 6, p063510-1 

    We investigated the effects of an increase in the barrier height on the enhancement of the efficiency of two-step photo-excitation in InAs quantum dot (QD) solar cells with a dot-in-well structure. Thermal carrier escape of electrons pumped in QD states was drastically reduced by sandwiching...

  • Proposal of high efficiency solar cells with closely stacked InAs/In0.48Ga0.52P quantum dot superlattices: Analysis of polarized absorption characteristics via intermediate-band. Yoshikawa, H.; Kotani, T.; Kuzumoto, Y.; Izumi, M.; Tomomura, Y.; Hamaguchi, C. // Applied Physics Letters;7/7/2014, Vol. 105 Issue 1, p1 

    We present a theoretical study of the electronic structures and polarized absorption properties of quantum dot superlattices (QDSLs) using wide-gap matrix material, InAs/In0.48Ga0.52P QDSLs, for realizing intermediate-band solar cells (IBSCs) with two-step photon-absorption. The plane-wave...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics