Amorphous-iron disilicide: A promising semiconductor

Milosavljevic´, M.; Shao, G.; Bibic´, N.; McKinty, C. N.; Jeynes, C.; Homewood, K. P.
September 2001
Applied Physics Letters;9/3/2001, Vol. 79 Issue 10
Academic Journal
We report here the synthesis and the measurements of the microstructural and optical properties of a promising semiconductor, amorphous-iron disilicide. The material was obtained by ion-beam mixing of Fe layers on Si, with Ar[sup 8+] ions, at 300 °C. Optical absorption measurements indicate a semiconductor with a direct band gap of 0.88 eV. The significance of this discovery is that it demonstrates the existence of such a material. It should be possible to synthesize by other techniques and could be applied in large-area electronics. © 2001 American Institute of Physics.


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