TITLE

Synthesis and characterization of highly-conducting nitrogen-doped ultrananocrystalline diamond films

AUTHOR(S)
Bhattacharyya, S.; Auciello, O.; Birrell, J.; Carlisle, J. A.; Curtiss, L. A.; Goyette, A. N.; Gruen, D. M.; Krauss, A. R.; Schlueter, J.; Sumant, A.; Zapol, P.
PUB. DATE
September 2001
SOURCE
Applied Physics Letters;9/3/2001, Vol. 79 Issue 10
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Ultrananocrystalline diamond (UNCD) films with up to 0.2% total nitrogen content were synthesized by a microwave plasma-enhanced chemical-vapor-deposition method using a CH[sub 4](1%)/Ar gas mixture and 1%–20% nitrogen gas added. The electrical conductivity of the nitrogen-doped UNCD films increases by five orders of magnitude (up to 143 Ω-1 cm-1) with increasing nitrogen content. Conductivity and Hall measurements made as a function of film temperature down to 4.2 K indicate that these films have the highest n-type conductivity and carrier concentration demonstrated for phase-pure diamond thin films. Grain-boundary conduction is proposed to explain the remarkable transport properties of these films. © 2001 American Institute of Physics.
ACCESSION #
5072633

 

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