Growth mode transition from layer by layer to step flow during the growth of heteroepitaxial SrRuO[sub 3] on (001) SrTiO[sub 3]

Choi, J.; Eom, C. B.; Rijnders, G.; Rogalla, H.; Blank, D. H. A.
September 2001
Applied Physics Letters;9/3/2001, Vol. 79 Issue 10
Academic Journal
We have observed the growth mode transition from two-dimensional (2D) layer-by-layer to step-flow in the earliest stage growth of heteroepitaxial SrRuO[sub 3] thin films on TiO[sub 2]-terminated (001) SrTiO[sub 3] substrates by in situ high pressure reflective high energy electron diffraction (RHEED) and atomic-force microscopy. There is no RHEED intensity recovery after each laser pulse in the first oscillation when the growth mode is 2D layer-by-layer. On the other hand, it is getting more pronounced in the second oscillation, and finally reaches a dynamic steady state in which the growth mode is completely changed into the step-flow mode. The origin of the growth mode transition can be attributed to a change in the mobility of adatoms and switching the surface termination layer from the substrate to the film. SrRuO[sub 3] thin films with an atomically smooth surface grown by atomic layer control can be used in oxide multilayered heterostructure devices. © 2001 American Institute of Physics.


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