TITLE

Interstitial oxygen loss and the formation of thermal double donors in Si

AUTHOR(S)
Lee, Young Joo; von Boehm, J.; Nieminen, R. M.
PUB. DATE
September 2001
SOURCE
Applied Physics Letters;9/3/2001, Vol. 79 Issue 10
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The combination of first-principles total energy calculations and a general kinetic model, which takes into account all processes of association, dissociation, and restructuring, is used to study the kinetics of thermal double donors (TDDs) in silicon over the temperature range of 300–650 °C. A strong correlation is found between the formation rate of TDDs and the loss rate of interstitial oxygen atoms. Also, a close agreement with experiments is obtained. It is found that TDDs grow via consecutive reactions where fast diffusing oxygen dimers and all TDDs capture interstitial oxygen atoms. © 2001 American Institute of Physics.
ACCESSION #
5072628

 

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