TITLE

Effect of N/Ge co-implantation on the Ge activation in GaN

AUTHOR(S)
Nakano, Yoshitaka; Kachi, Tetsu
PUB. DATE
September 2001
SOURCE
Applied Physics Letters;9/3/2001, Vol. 79 Issue 10
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
N-type regions have been produced in undoped GaN films by Ge and N/Ge implantation, sequentially, and subsequent annealing with a SiO[sub 2] encapsulation layer at 1300 °C. Improved Ge-doping characteristics have been achieved for GaN by N/Ge co-implantation, attaining activation efficiencies above 95%, whereas in the case of conventional Ge implantation, the activation efficiency is low owing to the generation of N vacancies. In particular, overlapping of the N-implanted region with the Ge one can make the Ge activation higher at a N/Ge ratio of ∼1. Therefore, the co-implantation of additional N atoms drastically enhances the Ge activation based on a site-competition effect. © 2001 American Institute of Physics.
ACCESSION #
5072623

 

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