TITLE

Positron annihilation study of vacancy-like defects related to oxygen precipitates in Czochralski-type Si

AUTHOR(S)
Brusa, R. S.; Deng, W.; Karwasz, G. P.; Zecca, A.; Pliszka, D.
PUB. DATE
September 2001
SOURCE
Applied Physics Letters;9/3/2001, Vol. 79 Issue 10
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We report the direct measurement of vacancy-like defects related to oxygen in the oxygen precipitation process in Czochralski Si. The vacancy-like defects were detected by measuring the positron lifetime and narrowing of the positron–electron annihilation momentum distribution. Oxygen atoms surrounding the vacancy-like defects were detected by analyzing the high-momentum part of the positron–electron momentum distribution measured by a Doppler broadening coincidence technique. It was found that the majority of the defects associated with oxygen have an effective open volume smaller than that of a silicon monovacancy. © 2001 American Institute of Physics.
ACCESSION #
5072614

 

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