TITLE

Effects of annealing time on defect-controlled ferromagnetism in Ga[sub 1-x]Mn[sub x]As

AUTHOR(S)
Potashnik, S. J.; Ku, K. C.; Chun, S. H.; Berry, J. J.; Samarth, N.; Schiffer, P.
PUB. DATE
September 2001
SOURCE
Applied Physics Letters;9/3/2001, Vol. 79 Issue 10
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We have studied the evolution of the magnetic, electronic, and structural properties of annealed epilayers of Ga[sub 1-x]Mn[sub x]As grown by low temperature molecular beam epitaxy. Annealing at the optimal temperature of 250 °C for less than 2 h significantly enhances the conductivity and ferromagnetism, but continuing the annealing for longer times suppresses both. These data indicate that such annealing induces the defects in Ga[sub 1-x]Mn[sub x]As to evolve through at least two different processes, and they point to a complex interplay between the different defects and ferromagnetism in this material. © 2001 American Institute of Physics.
ACCESSION #
5072613

 

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