Electrical properties of Bi[sub 3.25]La[sub 0.75]Ti[sub 3]O[sub 12] thin films on Si for a metal–ferroelectric–insulator–semiconductor structure

Choi, Taekjib; Kim, Young Sung; Yang, Cheol Woong; Lee, Jaichan
September 2001
Applied Physics Letters;9/3/2001, Vol. 79 Issue 10
Academic Journal
La-modified bismuth titanate [Bi[sub 3.25]La[sub 0.75]Ti[sub 3]O[sub 12] (BLT)] thin films have been grown at a low processing temperature of 620 °C by pulsed-laser deposition on a p-Si substrate with a nitrogen-doped thermal oxide SiO[sub 2] layer. This metal–ferroelectric–insulator–semiconductor structure exhibited a capacitance–voltage (C–V) hysteresis (memory window) due to ferroelectric polarization. The memory window reached a maximum of 0.8 V at a sweep voltage of 6 V. In addition, BLT films grown on Si exhibited the asymmetric behavior of C–V and current–voltage (I–V) characteristics, i.e., asymmetric shift of the threshold voltage with the sweep voltage. It is found that appreciable charge injection (indirect tunneling) occurs from Si, before the memory window does not even reach the maximum (i.e., 6 V in this structure). The trapped electrons injected from Si cause V[sub fb1] to shift toward the positive direction rather than the negative direction. This leads to the asymmetric behavior of the C–V curve and the decrease in the memory window. © 2001 American Institute of Physics.


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