TITLE

Improvement in ferroelectric properties of SrBi[sub 2]Ta[sub 2]O[sub 9] thin films with Bi[sub 2]O[sub 3] buffer layers by liquid-delivery metalorganic chemical-vapor deposition

AUTHOR(S)
Shin, Woong-Chul; Yoon, Soon-Gil
PUB. DATE
September 2001
SOURCE
Applied Physics Letters;9/3/2001, Vol. 79 Issue 10
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Ferroelectric SrBi[sub 2]Ta[sub 2]O[sub 9] (SBT) thin films were deposited onto the Bi[sub 2]O[sub 3] buffered Pt/Ti/SiO[sub 2]/Si substrates using liquid-delivery metalorganic chemical-vapor deposition. The SBT films with a 5-nm-thick Bi[sub 2]O[sub 3] buffer layer on a Pt bottom electrode showed (115) orientation stronger than those without the Bi[sub 2]O[sub 3] buffer layer after annealing at 750 °C. The Bi[sub 2]O[sub 3] buffer layer in Pt/Bi[sub 2]O[sub 3]/SBT/Bi[sub 2]O[sub 3]/Pt/Ti/SiO[sub 2]/Si capacitors effectively prevents the evaporation of Bi through the Pt top electrode and diffusion of Bi into the Pt bottom electrode. The remanent polarization and leakage current densities of SBT films with Bi[sub 2]O[sub 3] buffer layers were improved significantly in comparison with those for the films without the Bi[sub 2]O[sub 3] buffer layer. The remanent polarization (2P[sub r]) and coercive field (E[sub c]) of SBT films without and with the Bi[sub 2]O[sub 3] buffer layer annealed at 750 °C were 12 and 23 μC/cm[sup 2], 57 and 38 kV/cm at an applied voltage of 5 V, respectively. © 2001 American Institute of Physics.
ACCESSION #
5072604

 

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