Uniform patterned growth of carbon nanotubes without surface carbon

Teo, K. B. K.; Chhowalla, M.; Amaratunga, G. A. J.; Milne, W. I.; Hasko, D. G.; Pirio, G.; Legagneux, P.; Wyczisk, F.; Pribat, D.
September 2001
Applied Physics Letters;9/3/2001, Vol. 79 Issue 10
Academic Journal
In order to utilize the unique properties of carbon nanotubes in microelectronic devices, it is necessary to develop a technology which enables high yield, uniform, and preferential growth of perfectly aligned nanotubes. We demonstrate such a technology by using plasma-enhanced chemical-vapor deposition (PECVD) of carbon nanotubes. By patterning the nickel catalyst, we have deposited uniform arrays of nanotubes and single free-standing aligned nanotubes at precise locations. In the PECVD process, however, detrimental amorphous carbon (a-C) is also deposited over regions of the substrate surface where the catalyst is absent. Here, we show, using depth-resolved Auger electron spectroscopy, that by employing a suitable deposition (acetylene, C[sub 2]H[sub 2]) to etching (ammonia, NH[sub 3]) gas ratio, it is possible to obtain nanotube growth without the presence of a-C on the substrate surface. © 2001 American Institute of Physics.


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