Charging effect in InAs self-assembled quantum dots

Wang, T. H.; Li, H. W.; Zhou, J. M.
September 2001
Applied Physics Letters;9/3/2001, Vol. 79 Issue 10
Academic Journal
Metal-semiconductor-metal diode devices are fabricated with InAs self-assembled quantum dots (QDs). Both hysteresis loops and staircases are observed in the I–V characteristics, which are analyzed by employing the ideality factor of the Schottky contacts. The charging and discharging of the InAs QDs induce the hysteresis loops, resonant tunneling through the energy levels of QDs gives rise to the staircases. The charging effect is found to be weakened by the resonant tunneling, and the resonant tunneling cannot be observed in the voltage range where the loops are most pronounced. © 2001 American Institute of Physics.


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