Scanning tunneling nanolithography of amorphous GeSb[sub 2]Te[sub 4] films

Sugawara, Kentaro; Gotoh, Tamihiro; Tanaka, Keiji
September 2001
Applied Physics Letters;9/3/2001, Vol. 79 Issue 10
Academic Journal
Nanoscale surface modifications have been induced using a scanning tunneling microscope in a chalcogenide film GeSb[sub 2]Te[sub 4], which is employed for optical phase change memories. Depressions and expansions appear when the surface is scanned with positive and negative tip voltages under relative humidity higher than ∼50%. It is plausible that the depression and the expansion are produced through electrochemical reactions and anodic oxidation processes. © 2001 American Institute of Physics.


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