Minority-carrier diffusion length in a GaN-based light-emitting diode

Gonzalez, J. C.; Bunker, K. L.; Russell, P. E.
September 2001
Applied Physics Letters;9/3/2001, Vol. 79 Issue 10
Academic Journal
Minority-carrier diffusion lengths of electrons and holes were measured in a GaN-based light-emitting diode using the electron-beam-induced current technique in the line-scan configuration. A theoretical model with an extended generation source and a nonzero surface recombination velocity was used to accurately extract the diffusion length of the p- and n-type layers. A minority-carrier diffusion length of L[sub n]=(80±6) nm for electrons in the p-type GaN layer, L[sub p]=(70±4) nm for holes in the n-type GaN:Si,Zn active layer, and L[sub n]=(55±4) nm for electrons in the p-type Al[sub 0.1]Ga[sub 0.9]N layer were determined. The results from this model are compared with two simpler and widely used theoretical models. © 2001 American Institute of Physics.


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