Interface effect on the photocurrent: A comparative study on Pt sandwiched (Bi3.7Nd0.3)Ti3O12 and Pb(Zr0.2Ti0.8)O3 films

Dawei Cao; Jie Xu; Liang Fang; Wen Dong; Fengang Zheng; Mingrong Shen
May 2010
Applied Physics Letters;5/10/2010, Vol. 96 Issue 19, p192101
Academic Journal
We investigated and compared the photoelectric behavior of the Pt sandwiched (Bi3.7Nd0.3)Ti3O12 (BNT) and Pb(Zr0.2Ti0.8)O3 (PZT) films deposited by sol-gel method. Based on the analysis of the photocurrent and I-V characteristics, the top and bottom Pt/film interface Schottky barriers are found to be more symmetric in BNT, compared to that in PZT. The photocurrents originated from the depolarization field due to the alignment of ferroelectric polarization are different, although the polarizations of the two films are about the same. The mechanism behind the origin of the different photocurrent behaviors between Pt/BNT/Pt and Pt/PZT/Pt capacitors was discussed.


Related Articles

  • A method of determining the charge trapped at the interfaces of a metal/ferroelectric/metal thin-film structure. Delimova, L.; Grekhov, I.; Mashovets, D.; Shin, S.; Koo, J.; Kim, S.; Park, Y. // Physics of the Solid State;Jun2006, Vol. 48 Issue 6, p1182 

    A method is developed for determining the trap density at the metal/ferroelectric interfaces in a completely depleted ferroelectric film with two Schottky barriers. The method is based on the recharging of traps induced by an external pulsed bias. The ranges of the bias fields and of the...

  • Piezoelectric nonlinearity in ferroelectric thin films. Gharb, Nazanin Bassiri; Trolier-McKinstry, Susan; Damjanovic, Dragan // Journal of Applied Physics;8/15/2006, Vol. 100 Issue 4, p044107 

    The piezoelectric properties of {001} oriented 0.5Pb(Yb1/2Nb1/2)O3–0.5PbTiO3 films were studied. It was found that the films show Rayleigh-like behavior in that the magnitude of the piezoelectric coefficient depends linearly on the amplitude of the exciting ac electric field used for the...

  • Relaxor ferroelectric behavior of poly(vinylidene fluoride-trifluorethylene) copolymer modified by low energy irradiation. Faria, Luiz O.; Welter, Cezar; Moreira, Roberto L. // Applied Physics Letters;5/8/2006, Vol. 88 Issue 19, p192903 

    We report a relaxorlike modification in the ferroelectric poly(vinylidene fluoride-trifluorethylene) copolymer using ultraviolet (UV) irradiation. This behavior is clearly demonstrated by dielectric measurements. Besides the relaxor feature, the ferroelectric character of the material is...

  • Epitaxial/amorphous Ba0.3Sr0.7TiO3 film composite structure for tunable applications. Yamada, Tomoaki; Sherman, Vladimir O.; Nöth, Andreas; Muralt, Paul; Tagantsev, Alexander K.; Setter, Nava // Applied Physics Letters;7/17/2006, Vol. 89 Issue 3, p032905 

    A Ba0.3Sr0.7TiO3 (BST) thin film composite structure was fabricated by means of a selective epitaxial growth process. The epitaxial growth of BST on SrRuO3 electrode surface was selectively achieved at 485 °C using a prepatterned ultrathin amorphous BST layer that locally prevented...

  • Ba0.9Sr0.1TiO3-based Bragg reflectors fabricated from one single chemical solution. Hong, X. K.; Hu, G. J.; Chen, J.; Chu, J. H.; Dai, N.; Wu, H. Z. // Applied Physics Letters;8/21/2006, Vol. 89 Issue 8, p082902 

    Periodic ferroelectric multilayers consisting of alternating stack of the dense and porous Ba0.9Sr0.1TiO3 layers have been fabricated by spin-coating and annealing sol-gel techniques using one single precursor. With 16 periods, the Ba0.9Sr0.1TiO3 multilayers exhibit excellent performance as...

  • The effect of SrTiO3 substrate orientation on the surface morphology and ferroelectric properties of pulsed laser deposited NaNbO3 films. Yamazoe, Seiji; Sakurai, Hiroyuki; Fukada, Masaki; Adachi, Hideaki; Wada, Takahiro // Applied Physics Letters;8/10/2009, Vol. 95 Issue 6, p062906 

    Orientated NaNbO3 (NN) films were grown on SrRuO3/(001)SrTiO3 [SRO/(001)STO], SRO/(110)STO, and SRO/(111)STO substrates by pulsed laser deposition. Scanning electron microscopy images showed that the surface morphologies of the NN/SRO/(001)STO, NN/SRO/(110)STO, and NN/SRO/(111)STO took the form...

  • Ferroelectricity in sol-gel derived Ba[sub 0.8]Sr[sub 0.2]TiO[sub 3] thin films using a highly... Jian-Gong Cheng; Xiang-Jian Meng // Applied Physics Letters;10/4/1999, Vol. 75 Issue 14, p2132 

    Examines the ferroelectricity in sol-gel derived barium strontium titanate thin films using a highly diluted precursor solution. Formation of large grains from highly dilute spin-on solutions with layer-by-layer homoepitaxy indicated through x-ray diffraction and scanning electron microscopy.

  • Effects of BaBi[sub 2]Ta[sub 2]O[sub 9] thin buffer layer on crystallization and electrical properties of CaBi[sub 2]Ta[sub 2]O[sub 9] thin films on Pt-coated silicon. Kato, Kazumi; Suzuki, Kazuyuki; Nishizawa, Kaori; Miki, Takeshi // Journal of Applied Physics;5/1/2001, Vol. 89 Issue 9, p5088 

    Non-c-axis oriented CaBi[sub 2]Ta[sub 2]O[sub 9] (CBT) thin films have been successfully deposited via the triple alkoxide solution method on Pt-coated Si substrates by inserting BaBi[sub 2]Ta[sub 2]O[sub 9] (BBT) thin buffer layers. The BBT thin buffer layer, which was prepared on Pt-coated Si,...

  • Radiation effects on ferroelectric thin-film memories: Retention failure mechanisms. Scott, J. F.; Araujo, C. A.; Meadows, H. Brett; McMillan, L. D.; Shawabkeh, A. // Journal of Applied Physics;8/1/1989, Vol. 66 Issue 3, p1444 

    Presents information on a study which fabricated and tested ferroelectric thin film memories. Illustration of two qualitatively different theoretical descriptions used to analyze the switching kinetics in ferroelectric memories; Total dose experiment; Discussion of preferred state, poling and...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics