Thin-film transistors based on p-type Cu2O thin films produced at room temperature

Fortunato, Elvira; Figueiredo, Vitor; Barquinha, Pedro; Elamurugu, Elangovan; Barros, Raquel; Gonçalves, Gonçalo; Sang-Hee Ko Park; Chi-Sun Hwang; Martins, Rodrigo
May 2010
Applied Physics Letters;5/10/2010, Vol. 96 Issue 19, p192102
Academic Journal
Copper oxide (Cu2O) thin films were used to produce bottom gate p-type transparent thin-film transistors (TFTs). Cu2O was deposited by reactive rf magnetron sputtering at room temperature and the films exhibit a polycrystalline structure with a strongest orientation along (111) plane. The TFTs exhibit improved electrical performance such as a field-effect mobility of 3.9 cm2/V s and an on/off ratio of 2×102.


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