On ternary nitride substrates for visible semiconductor light-emitters

Sharma, T. K.; Towe, E.
May 2010
Applied Physics Letters;5/10/2010, Vol. 96 Issue 19, p191105
Academic Journal
No nitride or other substrate material exists for growing lattice-matched nitride device structures. Use of bulk GaN or sapphire substrates is complicated by lattice and thermal mismatches that lead to defect and dislocation generation. To alleviate this problem, we recently proposed ternary nitride substrates on which lattice-matched structures could be grown for lasers within specified spectral bands. These proposed application-oriented nitride substrates have one drawback: several would be required to cover the visible spectrum. By taking advantage of the complex (but feature-rich) valence band structure of nitrides, we have determined that a single substrate (In0.15Ga0.85N) could be used for the development of efficient blue, green, and red laser diodes.


Related Articles

  • High level injection phenomena in P–N junctions. Manifacier, J. C.; Ardebili, R.; Popescu, C. // Journal of Applied Physics;9/1/1996, Vol. 80 Issue 5, p2838 

    Presents a study that examined high level injection phenomena in P-N junctions. Details of the drift-diffusion model; Computer and analytical results; Conclusion.

  • Analysis of n+p silicon junctions with varying substrate doping concentrations made under... Aharoni, Herzl; Ohmi, Tadahiro // Journal of Applied Physics;2/1/1997, Vol. 81 Issue 3, p1270 

    Examines n+p silicon junctions with varying substrate doping concentrations using ultraclean processing technology. Influence of bulk and surface recombination/generation center concentrations and their trapping energy levels; Diffusion current as a function of substrate dopant concentrations;...

  • Single-level interface states in semiconductor structures investigated by admittance spectroscopy. Krispin, Peter // Applied Physics Letters;3/17/1997, Vol. 70 Issue 11, p1432 

    Investigates the single-level interface states in semiconductor structures through admittance spectroscopy. Incorporation of interface states by planar doping of deep-level defects; Identification of electronic traps as interface states; Observation of the transition between capture-controlled...

  • Third-order nonlinearity of semiconductor doped glasses at frequencies below band gap. Banfi, G.P.; Degiorgio, V. // Applied Physics Letters;7/3/1995, Vol. 67 Issue 1, p13 

    Measures the third-order nonlinear optical susceptibility of semiconductor doped glasses at frequencies below band gap. Adoption of a degenerate frequency mixing technique insensitive to free-carrier refraction; Comparison between nanocrystals and bulk semiconductors; Impact of annealing...

  • Resistless, area-selective ultrashallow P[sup +]/N junction fabrication using projection gas.... Kramer, K.-Josef; Talwar, Somit // Applied Physics Letters;4/22/1996, Vol. 68 Issue 17, p2320 

    Presents the selective fabrication of ultrashallow p+/n junctions in silicon using projection gas immersion laser doping. Elimination of conventional doping techniques like ion implantation; Achievement of spatially selective incorporation of boron into silicon; Use of a chromeless reticle to...

  • New model for dopant redistribution at interfaces. Orlowski, M. // Applied Physics Letters;10/23/1989, Vol. 55 Issue 17, p1762 

    A new model for dopant redistribution at an interface is derived and verified by data from segregation and outdiffusion experiments. In the present model, a third phase, the interface layer itself (interphase), is considered in addition to the adjacent bulk phases for the first time. The...

  • Enhanced second-order nonlinear optical response of LiNbO[sub 3] films upon Er doping. Gonzalo, J.; Chaos, J. A.; Suárez-Garcıa, A.; Afonso, C. N.; Pruneri, V. // Applied Physics Letters;9/30/2002, Vol. 81 Issue 14, p2532 

    Erbium-doped LiNbO[sub 3] films have been produced in a single-step process by alternate pulsed laser deposition. The dopant is incorporated in submonolayers whose nominal indepth separation is varied in the range 1.7-4.0 nm to lead respectively to Er concentrations in the range 3.4-0.6 ×...

  • Efficient photovoltaic energy conversion in pentacene-based heterojunctions. Scho¨n, J. H.; Kloc, Ch.; Batlogg, B. // Applied Physics Letters;10/16/2000, Vol. 77 Issue 16 

    We have prepared heterojunction devices based on ZnO and both pentacene single crystals and thin films. Their photovoltaic properties have been studied. Bromine doping is found to improve significantly the performance of such devices and solar-energy conversion efficiencies up to 4.5% are...

  • Formation of a p-n junction in silicon carbide by aluminum doping at room temperature using a.... Eryu, Osamu; Okuyama, Yasuo // Applied Physics Letters;10/2/1995, Vol. 67 Issue 14, p2052 

    Examines the formation of a p-n junction in n-type silicon carbide (6H-SiC) by aluminum doping. Use of pulsed laser doping method; Irradiation of 6H-SiC substrate in atmosphere by an KrF excimer laser; Determination of the depth profile of aluminum by secondary ion mass spectroscopy; Analysis...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics