TITLE

Thermal shot noise in top-gated single carbon nanotube field effect transistors

AUTHOR(S)
Chaste, J.; Pallecchi, E.; Morfin, P.; Fève, G.; Kontos, T.; Berroir, J.-M.; Hakonen, P.; Plaçais, B.
PUB. DATE
May 2010
SOURCE
Applied Physics Letters;5/10/2010, Vol. 96 Issue 19, p192103
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The high-frequency transconductance and current noise of top-gated single carbon nanotube transistors have been measured and used to investigate hot electron effects in one-dimensional transistors. Results are in good agreement with a theory of one-dimensional nanotransistor. In particular the prediction of a large transconductance correction to the Johnson–Nyquist thermal noise formula is confirmed experimentally. Experiment shows that nanotube transistors can be used as fast charge detectors for quantum coherent electronics with a resolution of [formula] in the 0.2–0.8 GHz band.
ACCESSION #
50510796

 

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