Resistance switching of Cu/SiO2 memory cells studied under voltage and current-driven modes

Bernard, Y.; Gonon, P.; Jousseaume, V.
May 2010
Applied Physics Letters;5/10/2010, Vol. 96 Issue 19, p193502
Academic Journal
Resistance switching in Cu/SiO2-based conductive-bridging random access memories is studied under voltage and current-driven modes. These two modes are used to study memory cycling and time-dependent switching. Voltage-current (V-I) cycles (logarithmic current ramp) are compared to I-V cycles (linear voltage ramp). The Off-On transition in V-I cycles is governed by device capacitance. The Off-On switching time (in the 10-1–103 s range) was studied under constant voltage and constant current stresses. The switching time varies as exp(V0/V) and as 1/I. Switching kinetics is discussed considering a Fowler–Nordheim tunneling injection law and a field-induced nucleation theory.


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