Two-dimensional electron or hole gas at ZnO/6H-SiC interface

Lu, Y. H.; Xu, B.; Wu, R. Q.; Feng, Y. P.
May 2010
Applied Physics Letters;5/10/2010, Vol. 96 Issue 19, p192109
Academic Journal
Electronic structures of ZnO(0001)/6H-SiC(0001) interfaces are investigated using first-principles method. Two-dimensional charge carriers are found at the interfaces. Depending on the interface structure, the type of charge carriers can be n-type if oxygen terminated ZnO(0001) is grown on SiC and p-type when the interface is formed with Zn-terminated ZnO and C-terminated SiC. The interface formed with Zn-terminated ZnO and Si-terminated SiC is found to be half-metallic. Intrinsic charge carriers at the interface of the two wide gap semiconductors could be useful for future oxide-based electronics and spintronics.


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