Charge detrapping and dielectric breakdown of nanocrystalline zinc oxide embedded zirconium-doped hafnium oxide high-k dielectrics for nonvolatile memories

Chia-Han Yang; Yue Kuo; Chen-Han Lin
May 2010
Applied Physics Letters;5/10/2010, Vol. 96 Issue 19, p192106
Academic Journal
Charge detrapping and dielectric breakdown phenomena of the nanocrystalline zinc oxide embedded zirconium-doped hafnium oxide high-k dielectric have been investigated. Charges were loosely or strongly retained at the nanocrystal sites which were saturated above a certain stress voltage. From the polarity change of the relaxation current, it was confirmed that the high-k part of the dielectric film was broken under a high gate bias voltage condition while the nanocrystals still retained charges. These charges were gradually released. These unique characteristics are important to the performance and reliability of the memory device.


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