TITLE

Nanoelectromechanical torsion switch of low operation voltage for nonvolatile memory application

AUTHOR(S)
Wenfeng Xiang; Chengkuo Lee
PUB. DATE
May 2010
SOURCE
Applied Physics Letters;5/10/2010, Vol. 96 Issue 19, p193113
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Nanoelectromechanical torsion switches are fabricated by using focused ion beam milling on silicon-on-insulator substrate. The device layer thickness of the substrate is 220 nm. A 9 μm long and 1.5 μm wide suspended silicon cantilever is mechanically connected to peripheral silicon device layer via a silicon torsion spring with the length of 2.4 μm and width of 530 nm. After hydrofluoric-acid vapor releasing, the silicon cantilever shows downward deflection. The pull-in voltage is about 5.5 V and the ratio of current measured at the ON/OFF states is over 1000. Moreover, the simulated data of pull-in voltage of torsion switch is in agreement with the experimental result, which will contribute to design of an optimal nanoelectromechanical torsion switch with a driven voltage as low as 1.2 V. According to the preliminary results, this torsion switch with low driven voltage has a great potential for high density non-volatile memory application.
ACCESSION #
50510767

 

Related Articles

  • Photothermal actuation in nanomechanical waveguide devices. Pernice, Wolfram H. P.; Li, Mo; Tang, Hong X. // Journal of Applied Physics;Jan2009, Vol. 105 Issue 1, p014508 

    We analyze the photothermal response of nanoelectromechanical systems (NEMS) integrated in a silicon photonic circuit over a wide frequency range. The dynamic response of NEMS devices is studied using a two-color pump-probe scheme in an on-chip photonic Mach–Zehnder interferometer. The...

  • Hybrid template approach achieves sub-30 nm NIL.  // Laser Focus World;Nov2008, Vol. 44 Issue 11, p17 

    The article describes a hybrid molecular-ruler approach developed at the Pennsylvania State University which achieves sub-30 nm patterning over a full water. It shows how electron-beam lithography or other methods create the first level of metallic features. A final etching process transfers the...

  • FRET detection of Octamer-4 on a protein nanoarray made by size-dependent self-assembly. Tran, Phat L.; Gamboa, Jessica R.; You, David J.; Jeong-Yeol Yoon // Analytical & Bioanalytical Chemistry;Sep2010, Vol. 398 Issue 2, p759 

    n alternative approach for fabricating a protein array at nanoscale is suggested with a capability of characterization and/or localization of multiple components on a nanoarray. Fluorescent micro- and nanobeads each conjugated with different antibodies are assembled by size-dependent...

  • Around the bend. Heber, Joerg // Nature Materials;Dec2011, Vol. 10 Issue 12, p902 

    The article presents a study which aims to develop a deposition method that enables the fabrication of nanoscale structures on flexible substrates, which was based on nanostencil lithography.

  • Interfacial structure and chemistry of epitaxial CoFe2O4 thin films on SrTiO3 and MgO substrates. Xie, S.; Cheng, J.; Wessels, B. W.; Dravid, V. P. // Applied Physics Letters;11/3/2008, Vol. 93 Issue 18, p181901 

    Interfacial structure and chemistry of epitaxial CoFe2O4 thin films on (001)_SrTiO3 and (001)_MgO substrates were investigated using high-angle-annular-dark-field imaging combined with electron-energy-loss-spectra (EELSs) analyses at a subnanometer scale. The results show that CoFe2O4/SrTiO3...

  • Shift of isoelectric point in extended nanospace investigated by streaming current measurement. Morikawa, Kyojiro; Mawatari, Kazuma; Kazoe, Yutaka; Tsukahara, Takehiko; Kitamori, Takehiko // Applied Physics Letters;9/19/2011, Vol. 99 Issue 12, p123115 

    Isoelectric points in extended nanochannels (580-2720 nm) fabricated on fused-silica substrates were measured using the streaming current method. The isoelectric point obtained in a 2720 nm channel was almost the same as the isoelectric point reported for the bulk (2.6-3.2). However, the...

  • Experimental Investigation of Adjacent Hall Structures Parameters. Cholakova, Ivelina N.; Takov, Tihomir B.; Tsankov, Radostin Ts.; Simonne, Nicolas; Tzanova, Slavka S. // World Academy of Science, Engineering & Technology;2012, Issue 71, p1443 

    Adjacent Hall microsensors, comprising a silicon substrate and four contacts, providing simultaneously two supply inputs and two differential outputs, are characterized. The voltage related sensitivity is in the order of 0.11T-1, and a cancellation method for offset compensation is used,...

  • Electrical transport properties of a nanorod GaN p-n homojunction grown by molecular-beam epitaxy. Park, Young S.; Park, Chang M.; Lee, J. W.; Cho, H. Y.; Kang, T. W.; Kyung-Hwa Yoo; Min-Soo Son; Myung-Soo Han // Journal of Applied Physics;Mar2008, Vol. 103 Issue 6, p066107 

    We investigated the electrical properties of a GaN nanorod p-n junction diode patterned on a SiO2 substrate using e-beam lithography. The electron transport mechanisms were characterized by temperature-dependence and current-voltage measurements. At a low temperature, the current-voltage curves...

  • Electrical properties of hybrid (ferromagnetic metal)—(layered semiconductor) Ni/ p–GaSe structures. Bakhtinov, A. P.; Vodopyanov, V. N.; Kovalyuk, Z. D.; Netyaga, V. V.; Lytvyn, O. S. // Semiconductors;Feb2010, Vol. 44 Issue 2, p171 

    Two-barrier Ni/n-Ga2Se3/p-GaSe structures with nanoscale Ni-alloy grains caused by reactions at the “metal-layered semiconductor” interface were formed after growing Ni layers on the p-GaSe (0001) surface. Current–voltage and capacitance–voltage characteristics of...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics