TITLE

Nonpolar resistive switching in the Pt/MgO/Pt nonvolatile memory device

AUTHOR(S)
Hsin-Hung Huang; Wen-Chieh Shih; Chih-Huang Lai
PUB. DATE
May 2010
SOURCE
Applied Physics Letters;5/10/2010, Vol. 96 Issue 19, p193505
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Nonpolar resistive switching (RS), which is the coexistence of unipolar and bipolar RS characteristics, in the Pt/MgO/Pt memory device with the nonforming nature is demonstrated. The nonforming nature is ascribed to the relatively high defect density of the MgO film deposited by using the ion beam sputtering in Ar atmosphere. The results of Auger electron spectroscopy and x-ray photoelectron spectroscopy analyses combing with the temperature dependence of resistance suggest that metallic Mg filaments are formed in the low resistance state. The voltage-polarity-independent RESET process implies that filaments may be ruptured by local Joule heating, leading to nonpolar characteristics.
ACCESSION #
50510763

 

Related Articles

  • Vertical alignment of liquid crystals on a fully oxidized HfO2 surface by ion bombardment. Won-Kyu Lee; Byeong-Yun Oh; Ji-Hun Lim; Park, Hong-gyu; Byoung-Yong Kim; Hyun-Jae Na; Dae-Shik Seo // Applied Physics Letters;6/1/2009, Vol. 94 Issue 22, p223507 

    High-performance liquid crystals (LCs) driven at a 0.9 V threshold were demonstrated on very thin HfO2 films with vertical (homeotropic) alignment by ion bombardment. Atomic layer deposition was used to obtain LC orientation on ultrathin high-quality films of double-layer HfO2/Al2O3. X-ray...

  • Profiling of BaTiO3 ion beam sputtering by optical spectroscopy. Klein, J. D.; Yen, A. // Journal of Applied Physics;7/1/1991, Vol. 70 Issue 1, p505 

    Investigates the profiling of BaTiO[sub3] ion beam sputtering by optical spectroscopy. Information on the spectra obtained in a lower resolution mode; Normalization of the intensity curves; Conclusion.

  • Highly thermally stable TiN nanocrystals as charge trapping sites for nonvolatile memory device applications. Choi, Sangmoo; Kim, Seok-Soon; Chang, Man; Hwang, Hyunsang; Jeon, Sanghun; Kim, Chungwoo // Applied Physics Letters;3/21/2005, Vol. 86 Issue 12, p123110 

    TiN nanocrystals formed by a co-sputtering method have been investigated as discrete charge traps for metal–oxide–nitride–oxide–silicon-type nonvolatile memory devices. The formation of isolated TiN nanocrystals embedded in Al2O3 was confirmed by transmission electron...

  • Angular ion and neutral energy distribution in a collisional rf sheath. Manenschijn, A.; Goedheer, W. J. // Journal of Applied Physics;3/1/1991, Vol. 69 Issue 5, p2923 

    Presents a numerical study on the ion and neutral angular impact energy distribution at the radio frequency-driven electrode of a reactive ion etcher. Contribution of the collision processes to the angular ion impact energy distribution; Derivation of expressions that can be used to predict...

  • Energy Spectra and Temperature Distributions of Clusters Produced During Ion-Beam Sputtering of Metals. Matveev, V.I.; Kochkin, S.A. // Technical Physics;Mar2004, Vol. 49 Issue 3, p345 

    A method for evaluating the energy spectra and temperature dependences of the yield of neutral and charged clusters that consist of N≥5 atoms and are produced by ion bombardment of metals is proposed. The results are presented in the form of simple formulas. Theoretical energy spectra of...

  • Photoelectron spectroscopic study of amorphous GaAsN films. Zanatta, A. R.; Zanatta, A.R.; Hammer, P.; Alvarez, F. // Applied Physics Letters;4/17/2000, Vol. 76 Issue 16 

    Amorphous gallium-arsenic-nitrogen (a-GaAsN) thin films were deposited by sputtering a crystalline GaAs target with different mixtures of argon and nitrogen. X-ray photoelectron spectroscopy (XPS) and x-ray excited Auger electron spectroscopy (XAES) were employed to study the Ga and As core...

  • Reducing the impurity incorporation from residual gas by ion bombardment during high vacuum magnetron sputtering. Rosén, Johanna; Widenkvist, Erika; Larsson, Karin; Kreissig, Ulrich; Mráz, Stanislav; Martinez, Carlos; Music, Denis; Schneider, J. M. // Applied Physics Letters;5/8/2006, Vol. 88 Issue 19, p191905 

    The influence of ion energy on the hydrogen incorporation has been investigated for alumina thin films, deposited by reactive magnetron sputtering in an Ar/O2/H2O environment. Ar+ with an average kinetic energy of ∼5 eV was determined to be the dominating species in the plasma. The films...

  • The combined use of a singly charged ion beam and undulator radiation for photoelectron spectrometry studies on atomic ions. Bizau, J. M.; Cubaynes, D.; Richter, M.; Wuilleumier, F.; Obert, J.; Putaux, J. C. // Review of Scientific Instruments;Jan1992, Vol. 63 Issue 1, p1389 

    We present the first photoelectron spectrometry experiment on a singly charged ion beam. Taking advantage of the high photon flux emitted in the undulator SU6 of Super- ACO, we have measured photoelectron spectra produced in the resonant photoionization of Ca[sup +] ions at 33.2-eV photon...

  • Band gap state formation in InP (110) induced by 10 and 100 eV argon ion bombardment. Deng, Z. W.; Kwok, R. W. M. // Journal of Applied Physics;10/1/1999, Vol. 86 Issue 7, p3676 

    Studies the dynamical process of surface band bending induced by ion bombardment as a function of ion fluence and energy using energy ion beam system and x-ray photoelectron spectrometer. Measurement of surface band bending and Fermi level positioning; Estimation of surface charge density;...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics