Electrode dependence of resistive switching in Mn-doped ZnO: Filamentary versus interfacial mechanisms

Peng, H. Y.; Li, G. P.; Ye, J. Y.; Wei, Z. P.; Zhang, Z.; Wang, D. D.; Xing, G. Z.; Wu, T.
May 2010
Applied Physics Letters;5/10/2010, Vol. 96 Issue 19, p192113
Academic Journal
We carry out a comparative study on resistive switching in Mn-doped ZnO thin films; samples grown on Pt and Si show unipolar and bipolar switching behaviors, respectively. Fittings of the current-voltage curves and area dependence of the device resistance reveal the filamentary conduction in Pt/Mn:ZnO/Pt. On the other hand, the interfacial effect dominates in Pt/Mn:ZnO/Si, and its low resistance state exponentially relaxes toward the high resistance state in contrast to the good data retention in Pt/Mn:ZnO/Pt. Our results suggest that selecting electrodes dictates the resistive switching mechanism presumably by affecting the migration dynamics of oxygen vacancies.


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