Physical and chemical characterization of combinatorial metal gate electrode Ta–C–N library film

Chang, K.-S.; Green, M. L.; Levin, I.; Hattrick-Simpers, J. R.; Jaye, C.; Fischer, D. A.; Takeuchi, I.; De Gendt, S.
May 2010
Applied Physics Letters;5/10/2010, Vol. 96 Issue 19, p192114
Academic Journal
This paper reports comprehensive structural and chemical analyses for the combinatorial Ta–C–N/HfO2 system, crucial data for understanding the electrical properties of Ta–C–N/HfO2. Combinatorial Ta–C–N “library” (composition spread) films were deposited by magnetron sputtering. Electron probe wavelength dispersive spectroscopy and x-ray fluorescence-yield near-edge spectroscopy were used to quantitatively determine the composition across these films. Scanning x-ray microdiffractometry determined that a solid solution of Ta(C,N)x forms and extends to compositions (0.3≤Ta≤0.5 and 0.57≤Ta≤0.67) that were previously unknown. The thermal stability of the Ta–C–N/HfO2 library was studied using high resolution transmission electron microscopy, which shows Ta–C–N/HfO2/SiO2/Si exhibiting good thermal stability up to 950 °C.


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