Photoluminescence studies of high-quality InAlN layer lattice-matched to GaN grown by metal organic chemical vapor deposition

Chen, Z. T.; Sakai, Y.; Egawa, T.
May 2010
Applied Physics Letters;5/10/2010, Vol. 96 Issue 19, p191911
Academic Journal
Temperature-dependent photoluminescence (PL) measurements have been performed on high-quality InAlN layers lattice-matched (LM) to GaN with different thicknesses. It is found that the PL is consisted of two components denoted as IH (high-energy side) and IL (low-energy side), respectively. IH is attributed to exciton luminescence of bulk InAlN with linewidth comparable to those calculated under the assumption of perfect random alloy. While IL is attributed to the emission from the quantum-dotlike structure on the surface of InAlN, revealing the importance of surface effect to the investigations related to InAlN LM to GaN.


Related Articles

  • Alternative precursor metal-organic chemical vapor deposition of InGaAs/GaAs quantum dot laser diodes with ultralow threshold at 1.25 μm. Strittmatter, A.; Germann, T. D.; Kettler, Th.; Posilovic, K.; Pohl, U. W.; Bimberg, D. // Applied Physics Letters;6/26/2006, Vol. 88 Issue 26, p262104 

    Laser diodes based on InGaAs quantum dots (QDs) operating at 1250 nm with ultralow threshold current densities of 66 A/cm2, transparency current densities of 10 A/cm2 per quantum dot layer, and high internal quantum efficiencies of 94% have been realized using alternative precursor metal-organic...

  • Study of InAs/GaAs quantum dots grown by MOVPE under the safer growth conditions. Zongyou Yin; Xiaohong Tang; Wei Liu; Sentosa Deny; Jinghua Zhao; Daohua Zhang // Journal of Nanoparticle Research;Oct2007, Vol. 9 Issue 5, p877 

    Abstract  InAs quantum dots (QDs) have been formed on GaAs (001) substrate by metal-organic vapor phase epitaxy (MOVPE) under the safer growth conditions: using tertiarybutylarsine (TBA) to replace AsH3 as the arsenic source and replacing hydrogen by pure nitrogen as the carrier gas....

  • High uniformity of site-controlled pyramidal quantum dots grown on prepatterned substrates. Baier, M.H.; Watanabe, S.; Pelucchi, E.; Kapon, E. // Applied Physics Letters;3/15/2004, Vol. 84 Issue 11, p1943 

    We studied the uniformity of site-controlled, pyramidal InGaAs/AlGaAs semiconductor quantum dots (QDs) grown by organometallic chemical vapor deposition on prepatterned substrates. The inhomogeneous broadening of the QD ground state emission has been determined to be 7.6 meV by statistical...

  • Interface alloy mixing effect in the growth of self-assembled InP quantum dots on InAlGaP matrices by metalorganic chemical-vapor deposition. Zhang, X. B.; Ryou, J. H.; Dupuis, R. D.; Walter, G.; Holonyak Jr., N. // Journal of Applied Physics;9/15/2005, Vol. 98 Issue 6, p063501 

    We report on the growth of InP self-assembled quantum dots (SAQDs or simply QDs) on In0.5(AlxGa1-x)0.5P matrices grown on (001) GaAs substrates by metalorganic chemical-vapor deposition. We find that the size of InP QDs grown on the In0.5Al0.5P matrix decreases and the density increases when the...

  • Morphology and Structure of Self-Assembled InxGa1-xAs Quantum Dots Grown on GaAs (100) Using MOCVD. Othaman, Zulkafli; Aryanto, Didik; Ismail, Abd. Khamim // AIP Conference Proceedings;6/1/2009, Vol. 1136 Issue 1, p36 

    Stacked InxGa1-xAs quantum dots (QDs) were grown by metal-organic chemical vapor deposition (MOCVD) via Stranski -Krastanov growth mode. AFM images show that the QDs structures were formed and the stacked structure of InxGa1-xAs QDs were confirmed by the HR-XRD analysis. Composition of the dots...

  • Wavelength control from 1.25 to 1.4 μm in In[sub x]Ga[sub 1-x]As quantum dot structures grown by metal organic chemical vapor deposition. Passaseo, A.; Maruccio, G.; De Vittorio, M.; Rinaldi, R.; Cingolani, R.; Lomascolo, M. // Applied Physics Letters;3/5/2001, Vol. 78 Issue 10, p1382 

    This letter reports on the realization of long-wavelength InGaAs quantum dots (QDs) fabricated by metal organic chemical vapor deposition. By controlling the In incorporation in the QD layers and/or in the barrier embedding the QDs, we are able to tune the wavelength emission continuously from...

  • Cathodoluminescence spectroscopy and imaging of individual GaN dots. Petersson, Anders; Gustafsson, Anders; Samuelson, Lars; Tanaka, Satoru; Aoyagi, Yoshinobu // Applied Physics Letters;6/6/1999, Vol. 74 Issue 23, p3513 

    Studies uncapped GaN dots on AlGaN barrier material grown by metallic organic chemical vapor deposition on 6H-SiC substrates. Investigation of luminescence and structure of individual GaN dots using cathodoluminescence microscopy and scanning electron microscopy; Correlation between the...

  • MOCVD growth and properties of ZnO films using dimethylzinc and oxygen. Ye, J. D.; Gu, S. L.; Qin, F.; Zhu, S. M.; Liu, S. M.; Zhou, X.; Liu, W.; Hu, L. Q.; Zhang, R.; Shi, Y.; Zheng, Y.D.; Ye, Y. D. // Applied Physics A: Materials Science & Processing;Sep2005, Vol. 81 Issue 4, p809 

    The ZnO films were grown by low pressure metal-organic chemical vapor deposition (LP-MOCVD) using dimethylzinc (DMZn) and oxygen. The as-grown film has strong (0002) oriented characteristic, containing the chain-like network grains in small sizes, A well-resolved shoulder emission at 3.03 eV in...

  • Characterization of an AlN buffer layer and a thick-GaN layer grown on sapphire substrate by MOCVD. Çörekçi, S.; Öztürk, M.; Bengi, A.; Çakmak, M.; Özçelik, S.; Özbay, E. // Journal of Materials Science;Mar2011, Vol. 46 Issue 6, p1606 

    n AlN buffer layer and a thick-GaN layer for high-electron-mobility transistors (HEMTs) were grown on sapphire substrate by metal-organic chemical vapor deposition (MOCVD). The structural and morphological properties of the layers were investigated by high resolution X-ray diffraction (HRXRD)...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics