TITLE

Epitaxial graphene on cubic SiC(111)/Si(111) substrate

AUTHOR(S)
Ouerghi, A.; Kahouli, A.; Lucot, D.; Portail, M.; Travers, L.; Gierak, J.; Penuelas, J.; Jegou, P.; Shukla, A.; Chassagne, T.; Zielinski, M.
PUB. DATE
May 2010
SOURCE
Applied Physics Letters;5/10/2010, Vol. 96 Issue 19, p191910
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Epitaxial graphene films grown on silicon carbide (SiC) substrate by solid state graphitization is of great interest for electronic and optoelectronic applications. In this paper, we explore the properties of epitaxial graphene films on 3C-SiC(111)/Si(111) substrate. X-ray photoelectron spectroscopy and scanning tunneling microscopy were extensively used to characterize the quality of the few-layer graphene (FLG) surface. The Raman spectroscopy studies were useful in confirming the graphitic composition and measuring the thickness of the FLG samples.
ACCESSION #
50510745

 

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