TITLE

Terahertz emission from metal-organic chemical vapor deposition grown Fe:InGaAs using 830 nm to 1.55 μm excitation

AUTHOR(S)
Wood, C. D.; Hatem, O.; Cunningham, J. E.; Linfield, E. H.; Davies, A. G.; Cannard, P. J.; Robertson, M. J.; Moodie, D. G.
PUB. DATE
May 2010
SOURCE
Applied Physics Letters;5/10/2010, Vol. 96 Issue 19, p194104
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We demonstrate the generation of broadband terahertz (THz) frequency radiation from photoconductive emitters formed from Fe-doped InGaAs (Fe:InGaAs), grown by metal-organic chemical vapor deposition, following pulsed (femtosecond) laser excitation at wavelengths ranging from 830 nm to 1.55 μm. The Fe is incorporated epitaxially during growth, giving precise control over the doping level. Using both single-crystal ZnTe and GaP electro-optic detectors over the same wavelength range, the emission spectra from several Fe:InGaAs wafers with different Fe content were measured, with THz emission from all wafers showing bandwidths in excess of 2.0 THz. The THz output power was found to be strongly dependant on the Fe content, the thickness of the Fe:InGaAs layer, and the excitation wavelength.
ACCESSION #
50510735

 

Related Articles

  • Terahertz-frequency photoconductive detectors fabricated from metal-organic chemical vapor deposition-grown Fe-doped InGaAs. Hatem, O.; Cunningham, J.; Linfield, E. H.; Wood, C. D.; Davies, A. G.; Cannard, P. J.; Robertson, M. J.; Moodie, D. G. // Applied Physics Letters;3/21/2011, Vol. 98 Issue 12, p121107 

    We report the detection of terahertz frequency radiation using photoconductive antennas fabricated from Fe-doped InGaAs, grown by metal-organic chemical vapor deposition. Coherent photoconductive detection is demonstrated using femtosecond laser pulses centered at either an 800 or a 1550 nm...

  • Growth and characterization of crack-free semipolar {1-101}InGaN/GaN multiple-quantum well on V-grooved (001)Si substrates. Guan-Ting Chen; Shih-Pang Chang; Jen-Inn Chyi; Mao-Nan Chang // Applied Physics Letters;6/16/2008, Vol. 92 Issue 24, p241904 

    This work elucidates the two-stage growth of GaN on V-grooved (001)Si substrates using metal-organic chemical vapor deposition. The first growth stage proceeds on the {111}Si sidewalls until GaN fills the V grooves. Then the second stage continues and leads to a semipolar surface with the...

  • Photoluminescence, photoluminescence excitation, and resonant Raman spectroscopy of disordered and ordered Ga0.52In0.48P. DeLong, M. C.; Mowbray, D. J.; Hogg, R. A.; Skolnick, M. S.; Hopkinson, M.; David, J. P. R.; Taylor, P. C.; Kurtz, Sarah R.; Olson, J. M. // Journal of Applied Physics;5/15/1993, Vol. 73 Issue 10, p5163 

    Presents a study that extended photoluminescence excitation (PLE) investigations to samples with varying degrees and details of ordering growth by both organometallic vapor phase epitaxy and solid source molecular beam epitaxy. Function of PLE; Scope of the expression degrees and details of...

  • Evolution of femtosecond laser-induced damage in doped GaN thin films. Grinys, Tomas; Dmukauskas, Mantas; Ščiuka, Mindaugas; Nargelas, Saulius; Melninkaitis, Andrius // Applied Physics A: Materials Science & Processing;Feb2014, Vol. 114 Issue 2, p381 

    Mg- and Si-doped GaN layers deposited by metalorganic chemical vapor deposition method were irradiated with femtosecond pulse duration laser of three different wavelengths 1,030, 515 and 343 nm. Both single and multiple shot laser induced damage thresholds of doped GaN layers were evaluated and...

  • Resonant microcavity enhanced infrared photodetectors. Kaniewski, Janusz; Muszalski, Jan; Piotrowski, J�zef // Optica Applicata;2007, Vol. 37 Issue 4, p405 

    Resonant cavity enhanced (RCE) infrared photodetectors are used in many applications due to their high quantum efficiency and large bandwidth. Therefore, wide device diversity is desired. In this paper, recent tendencies in design and fabrication of these devices are presented. Various issues...

  • Efficient Schottky-like junction GaAs nanowire photodetector with 9GHz modulation bandwidth with large active area. Seyedi, M. A.; Yao, M.; O'Brien, J.; Wang, S. Y.; Dapkus, P. D. // Applied Physics Letters;7/28/2014, Vol. 105 Issue 4, p1 

    Efficient, low capacitance density GaAs/Indium-Tin-Oxide Schottky-like junction photodetectors with a 50 lm square active are fabricated for operation in the gigahertz range. Modulation bandwidth is experimentally measured up to 10 GHz at various applied reverse biases and optical intensities to...

  • Excitation pathways and efficiency of Eu ions in GaN by site-selective spectroscopy. Fleischman, Z.; Munasinghe, C.; Steckl, A.; Wakahara, A.; Zavada, J.; Dierolf, V. // Applied Physics B: Lasers & Optics;Nov2009, Vol. 97 Issue 3, p607 

    Using combined excitation emission spectroscopy, we performed a comparative study of europium ions in GaN in samples that have been in situ doped during interrupted growth epitaxy (IGE) or conventional molecular beam epitaxy (MBE) as well as samples that were grown using organometallic vapor...

  • Frequency comb generation at terahertz frequencies by coherent phonon excitation in silicon. Hase, Muneaki; Katsuragawa, Masayuki; Constantinescu, Anca Monia; Petek, Hrvoje // Nature Photonics;Apr2012, Vol. 6 Issue 4, p243 

    High-order nonlinear light-matter interactions in gases enable the generation of X-ray and attosecond light pulses, metrology and spectroscopy. Optical nonlinearities in solid-state materials are particularly interesting for combining optical and electronic functions for high-bandwidth...

  • Intense terahertz emission from undoped GaAs/n-type GaAs and InAs/AlSb structures grown on Si substrates in the transmission-geometry excitation. Estacio, E.; Takatori, S.; Pham, M.; Yoshioka, T.; Nakazato, T.; Cadatal-Raduban, M.; Shimizu, T.; Sarukura, N.; Hangyo, M.; Que, C.; Tani, M.; Edamura, T.; Nakajima, M.; Misa, J.; Jaculbia, R.; Somintac, A.; Salvador, A. // Applied Physics B: Lasers & Optics;Jun2011, Vol. 103 Issue 4, p825 

    Intense terahertz radiation was generated from femtosecond laser-irradiated InAs and GaAs layers on Si substrates. Results show that InAs/Si and GaAs/Si films can be excited in reflection and transmission geometries. The InAs/Si film exhibited weaker emission for both excitation cases but it...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics