The impact of SiNx gate insulators on amorphous indium-gallium-zinc oxide thin film transistors under bias-temperature-illumination stress

Ji Sim Jung; Kyoung Seok Son; Kwang-Hee Lee; Joon Seok Park; Tae Sang Kim; Jang-Yeon Kwon; Kwun-Bum Chung; Jin-Seong Park; Bonwon Koo; Sangyun Lee
May 2010
Applied Physics Letters;5/10/2010, Vol. 96 Issue 19, p193506
Academic Journal
The threshold voltage instability (Vth) in indium-gallium-zinc oxide thin film transistor was investigated with disparate SiNx gate insulators under bias-temperature-illumination stress. As SiNx film stress became more tensile, the negative shift in Vth decreased significantly from -14.34 to -6.37 V. The compressive films exhibit a nitrogen-rich phase, higher hydrogen contents, and higher N–H bonds than tensile films. This suggests that the higher N–H related traps may play a dominant role in the degradation of the devices, which may provide and/or generate charge trapping sites in interfaces and/or SiNx insulators. It is anticipated that the appropriate optimization of gate insulator properties will help to improve device reliability.


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