TITLE

Photoluminescence from quantum dots in cubic GaN/InGaN/GaN double heterostructures

AUTHOR(S)
Husberg, O.; Khartchenko, A.; As, D. J.; Vogelsang, H.; Frey, T.; Schikora, D.; Lischka, K.; Noriega, O. C.; Tabata, A.; Leite, J. R.
PUB. DATE
August 2001
SOURCE
Applied Physics Letters;8/27/2001, Vol. 79 Issue 9, p1243
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We have measured photoluminescence spectra of molecular-beam-epitaxy-grown cubic GaN/In[sub x]Ga[sub 1-x]N/GaN double heterostructures with x between 0.09 and 0.33. We observe a luminescence peak at about 2.3–2.4 eV which is almost independent of the InGaN layer composition. High-resolution x-ray diffraction measurements revealed a pseudomorphic In-rich phase with x=0.56±0.02 embedded in the InGaN layers. Including strain effects we calculate a gap energy E[sub g]=2.13 eV of this phase. In cubic InGaN, spontaneous polarization and strain-induced piezoelectric fields are negligible. Therefore, the observed difference between the luminescence energy and the gap of the In-rich phase is assumed to be due to the localization of excitons at quantum-dot-like structures with a size of about 15 nm. © 2001 American Institute of Physics.
ACCESSION #
5045927

 

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