Photoluminescence from quantum dots in cubic GaN/InGaN/GaN double heterostructures

Husberg, O.; Khartchenko, A.; As, D. J.; Vogelsang, H.; Frey, T.; Schikora, D.; Lischka, K.; Noriega, O. C.; Tabata, A.; Leite, J. R.
August 2001
Applied Physics Letters;8/27/2001, Vol. 79 Issue 9, p1243
Academic Journal
We have measured photoluminescence spectra of molecular-beam-epitaxy-grown cubic GaN/In[sub x]Ga[sub 1-x]N/GaN double heterostructures with x between 0.09 and 0.33. We observe a luminescence peak at about 2.3–2.4 eV which is almost independent of the InGaN layer composition. High-resolution x-ray diffraction measurements revealed a pseudomorphic In-rich phase with x=0.56±0.02 embedded in the InGaN layers. Including strain effects we calculate a gap energy E[sub g]=2.13 eV of this phase. In cubic InGaN, spontaneous polarization and strain-induced piezoelectric fields are negligible. Therefore, the observed difference between the luminescence energy and the gap of the In-rich phase is assumed to be due to the localization of excitons at quantum-dot-like structures with a size of about 15 nm. © 2001 American Institute of Physics.


Related Articles

  • Staircase-like spectral dependence of ground-state luminescence time constants in high-density InAs/GaAs quantum dots. Mazur, Yu. I.; Tomm, J. W.; Petrov, V.; Tarasov, G. G.; Kissel, H.; Walther, C.; Zhuchenko, Z. Ya.; Masselink, W. T. // Applied Physics Letters;5/21/2001, Vol. 78 Issue 21, p3214 

    Time-resolved photoluminescence (PL) from InAs/GaAs quantum dots with a bimodal size distribution is used to investigate the dynamic carrier-transfer processes which couple transfer between similarly sized quantum dots and between quantum dots in different size categories. The relationship...

  • Influence of GaAs capping on the optical properties of InGaAs/GaAs surface quantum dots with 1.5 μm emission. Saito, Hideaki; Nishi, Kenichi; Sugou, Shigeo // Applied Physics Letters;11/9/1998, Vol. 73 Issue 19 

    Uncapped InGaAs quantum dots (surface quantum dots) on a GaAs substrate emit photoluminescence at a long wavelength of 1.53 μm at room temperature. When the surface dots are covered by a GaAs cap layer, the emission energy of the dots increases by 287 meV. This large energy shift is mainly...

  • Influence of growth conditions on the photoluminescence of self-assembled InAs/GaAs quantum dots. Chu, L.; Arzberger, M. // Journal of Applied Physics;2/15/1999, Vol. 85 Issue 4, p2355 

    Presents information on a study which investigated the influence of various growth parameters on the optical properties of self-assembled quantum dots. Experimental details; Results and discussion; Conclusion.

  • Photoluminescence of CdSe nanocrystallites embedded in BaTiO[sub 3] matrix. Zhou, Ji; Li, Longtu; Gui, Zhilun; Buddhudu, S.; Zhou, Yan // Applied Physics Letters;3/20/2000, Vol. 76 Issue 12, p1540 

    This letter reports the photoluminescence properties of CdSe quantum dots (QDs) embedded in a ferroelectric BaTiO[sub 3] matrix. The main emission from the samples has been assigned to the band-edge transition of QDs. With an increase in the heat treatment temperature, the emission peak has been...

  • Room-Temperature Photoluminescence at 1.55μm from Heterostructures with InAs/InGaAsN Quantum Dots on GaAs Substrates. Odnoblyudov, V. A.; Egorov, A. Yu.; Kryzhanovskaya, N. V.; Gladyshev, A. G.; Mamutin, V. V.; Tsatsul’nikov, A. F.; Ustinov, V. M. // Technical Physics Letters;Nov2002, Vol. 28 Issue 11, p964 

    Room-temperature photoluminescence (PL) at 1.55 µm from heterostructures with InAs/InGaAsN quantum dots (QDs) grown by MBE on GaAs substrates is demonstrated for the first time. The effect of nitrogen incorporated into InAs/InGaAsN QDs on the PL wavelength and intensity was studied. The...

  • Photoluminescence from Multilayer InAs/GaAs Structures with Quantum Dots in the 1.3—1.4μm Wavelength Range. Egorov, V. A.; Petrov, V. N.; Polyakov, N. K.; Tsyrlin, G. É.; Volovik, B. V.; Zhukov, A. E.; Ustinov, V. M. // Technical Physics Letters;Jul2000, Vol. 26 Issue 7, p631 

    The optical properties of multilayer heterostructures with quantum dots were studied for InAs/GaAs systems obtained by the combined method of molecular-beam epitaxy and submonolayer migration-stimulated epitaxy. Using these structures, it is possible to obtain the room-temperature...

  • Matrix dependence of strain-induced wavelength shift in self-assembled InAs quantum-dot heterostructures. Yeh, N.-T.; Nee, T.-E.; Chyi, J.-I.; Hsu, T. M.; Huang, C. C. // Applied Physics Letters;3/20/2000, Vol. 76 Issue 12, p1567 

    We report on the matrix-dependent strain effect in self-assembled InAs quantum-dot heterostructures using photoluminescence measurements. A series of samples were prepared to examine the effect of quantum dot position with respect to the so-called strain-reducing layer (SRL). Since the SRL...

  • Investigation of lateral exciton transfer of coexistent quantum dot systems. Lee, Jia-Ren; Lu, Chien-Rong; Jen, Jen-Yi // Journal of Applied Physics;Oct2008, Vol. 104 Issue 7, p073523 

    The optical characterization of the ZnCdSe/ZnSe quantum dot (QDs) system is studied by photoluminescence (PL) spectrum measured at temperatures from 22 to 300 K. The distinct quenching rates of spectral integrated intensity demonstrate that there are divergent lateral exciton transfer modes...

  • The absorption coefficient of PbSe/CdSe core/shell colloidal quantum dots. De Geyter, Bram; Hens, Zeger // Applied Physics Letters;10/18/2010, Vol. 97 Issue 16, p161908 

    PbSe/CdSe core/shell colloidal quantum dots (QDs) are used as a model system to study the absorption coefficient of colloidal QD heterostructures, consisting of at least two semiconductor materials. We show that at energies far above the band gap (3.1 and 3.5 eV) the experimental intrinsic...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics