Selective area metalorganic vapor phase epitaxy of thick crack-free GaN films on trenched SiC substrates

Akasaka, Tetsuya; Ando, Seigo; Nishida, Toshio; Saito, Hisao; Kobayashi, Naoki
August 2001
Applied Physics Letters;8/27/2001, Vol. 79 Issue 9, p1261
Academic Journal
Crack-free GaN films up to 11-μm-thick have been grown by using trenched SiC substrates and selective area metalorganic vapor phase epitaxy. These crack-free GaN films have hexagonal shapes and are surrounded by trenches. 97% of the hexagonal GaN films with side lengths of 100 μm and thickness of 11 μm was crack-free. The GaN films do not crack because the lateral propagation of cracks stops at the trenches and strain is relaxed in the small-area hexagonal GaN. This strain relaxation is confirmed by micro-Raman scattering measurements and agrees well with theoretical predictions. © 2001 American Institute of Physics.


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