Self-doping near the seed/layer interface in conformal GaAs layers grown on Si

Ardila, A. M.; Martı´nez, O.; Avella, M.; Jime´nez, J.; Ge´rard, B.; Napierala, J.; Gil-Lafon, E.
August 2001
Applied Physics Letters;8/27/2001, Vol. 79 Issue 9, p1270
Academic Journal
Undoped GaAs layers grown on Si substrates by the conformal method were studied by micro-Raman spectroscopy, cathodoluminescence, and diluted Sirtl solution with light (DSL) etching. The results show that nonintentional doping of conformal layers can take place near the seed/layer interface. The self-doped area presents a bright luminescence emission and shows longitudinal optic-plasmon coupled Raman modes. The nonintentional dopants were n type as deduced from Raman spectroscopy and DSL selective etching. The doped region extends only 2–3 μm from the seed and was tentatively associated with enhanced diffusion of Si in the presence of dislocations at the interface between the seed and the conformal layer. © 2001 American Institute of Physics.


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