Binding energy of vacancy clusters generated by high-energy ion implantation and annealing of silicon

Venezia, V. C.; Pelaz, L.; Gossmann, H.-J. L.; Haynes, T. E.; Rafferty, C. S.
August 2001
Applied Physics Letters;8/27/2001, Vol. 79 Issue 9, p1273
Academic Journal
We have measured the evolution of the excess-vacancy region created by a 2 MeV, 10[sup 16]/cm[sup 2] Si implant in the silicon surface layer of silicon-on-insulator substrates. Free vacancy supersaturations were measured with Sb dopant diffusion markers during postimplant annealing at 700, 800, and 900 °C, while vacancy clusters were detected by Au labeling. We demonstrate that a large free vacancy supersaturation exists for short times, during the very early stages of annealing between the surface and the buried oxide (1 μm below). Afterwards, the free vacancy concentration returns to equilibrium in the presence of vacancy clusters. These vacancy clusters form at low temperatures and are stable to high temperatures, i.e., they have a low formation energy and high binding energy. © 2001 American Institute of Physics.


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