Ultrafast carrier trapping in microcrystalline silicon observed in optical pump–terahertz probe measurements

Uhd Jepsen, P.; Schairer, W.; Libon, I. H.; Lemmer, U.; Hecker, N. E.; Birkholz, M.; Lips, K.; Schall, M.
August 2001
Applied Physics Letters;8/27/2001, Vol. 79 Issue 9, p1291
Academic Journal
We report on direct evidence of ultrafast carrier dynamics displaying features on the picosecond time scale in microcrystalline silicon (μc-Si:H). The dynamics of photogenerated carriers is studied by using above-band-gap optical excitation and probing the instantaneous carrier mobility and density with a THz pulse. Within the first picoseconds after excitation, the THz transmission transients show a fast initial decay of the photoinduced absorption followed by a slower decrease due to carrier recombination. We propose that the initial fast decay in the THz transients is due to carrier capture in the trapping states. © 2001 American Institute of Physics.


Related Articles

  • Free-electron laser with longitudinal wiggler in a waveguide partially filled with a relativistic electron beam. Mehdian, Hassan; Hwang, Un-Hak; Willett, Joseph E. // Journal of Applied Physics;7/1/1991, Vol. 70 Issue 1, p517 

    Analyzes the parametric excitation of a space-charge wave and a transfer magnetic mode in a cylindrical metallic waveguide partially filled with a relativistic electron beam. Information on the total longitudinal component o the electric field; Dimensionless quantities that are employed to...

  • Asymmetric luminescence line shape and exciton energy relaxation in... Shen, J. X.; Pittini, R. // Applied Physics Letters;11/29/1999, Vol. 75 Issue 22, p3494 

    Studies asymmetric luminescence line shape and exciton energy relaxation in Zn[sub1-x-y]Mg[x]Cd[suby]Se epilayers. Fitted energy difference between two peaks; Energy relaxation of the FX.

  • UV-blue photoluminescence from close-packed SiC nanocrystal film. Fan, J. Y.; Li, H. X.; Wang, Q. J.; Dai, D. J.; Chu, P. K. // Applied Physics Letters;2/21/2011, Vol. 98 Issue 8, p081913 

    We observed stable photoluminescence from close-packed cubic SiC nanocrystals that are self-assembled into thin solid film. The peak wavelength shifts from blue to near UV with increasing excitation energy and follows well the quantum-confinement effect. The photoluminescence excitation spectrum...

  • Electroluminescence from amorphous-SiNx:H/SiO2 multilayers using lateral carrier injection. Kamyab, L.; Rusli; Yu, M. B.; Ding, L.; Lo, G.-Q. // Applied Physics Letters;2/7/2011, Vol. 98 Issue 6, p061105 

    We report the observation of photoluminescence and electroluminescence from amorphous-SiNx:H/SiO2 multilayer structures. An effective method of current injection has been implemented for electrical excitation of these structures whereby the electric field is applied parallel to the plane of the...

  • Gas dynamic aspects of silicon thin layers deposition using excitation of a free jet of the working gas mixture by an electron beam. Skovorodko, P. A.; Sharafutdinov, R. G.; Shchukin, V. G.; Konstantinov, V. O. // AIP Conference Proceedings;Nov2012, Vol. 1501 Issue 1, p1437 

    A film of microcrystalline silicon (μc-Si:H) deposited at low temperature is a promising material for thin-film silicon solar cells with high efficiency and high stability. To deposit silicon thin films with high deposition rate and high quality, a novel gas-jet deposition method has been...

  • Athermal crystallization induced by electronic excitations in ion-irradiated silicon carbide. Benyagoub, A.; Audren, A.; Thomé, L.; Garrido, F. // Applied Physics Letters;12/11/2006, Vol. 89 Issue 24, p241914 

    Silicon carbide single crystals were irradiated at room temperature with low energy I ions and high energy Pb ions. It is found that the damaged layer formed by the elastic collisions generated during low energy I ion irradiation can readily be removed by the electronic excitations induced by...

  • Sensitization of the minority carrier lifetime in hydrogenated amorphous silicon. Rapaport, R.; Lubianiker, Y.; Balberg, I.; Fonseca, L. // Applied Physics Letters;1/5/1998, Vol. 72 Issue 1 

    While sensitization of the photoconductivity, i.e., the increase of the majority carrier lifetime by the addition of recombination centers, is known for many years, there was no evidence or suggestion for the corresponding sensitization of the minority carrier lifetime. In this letter, we...

  • Preparation and superconducting properties of ultrathin YBa2Cu3O7-x films. Xi, X. X.; Geerk, J.; Linker, G.; Li, Q.; Meyer, O. // Applied Physics Letters;6/5/1989, Vol. 54 Issue 23, p2367 

    Ultrathin films of YBa2Cu3O7-x with thicknesses down to 2 nm were grown on(100)SrTiO3 and (100)MgO by inverted cylindrical magnetron sputtering. Metallic behavior and zero resistance temperatures above 4.2 K were obtained in 3-nm-thick films on SrTiO3. Thinner films revealed...

  • Electroluminescence in thin-film CaS:Ce. Shanker, Virendra; Tanaka, Shosaku; Shiiki, Masatoshi; Deguchi, Hiroshi; Kobayashi, Hiroshi; Sasakura, Hiroshi // Applied Physics Letters;1984, Vol. 45 Issue 9, p960 

    We report a double insulated CaS:Ce thin-film electroluminescent (EL) device which emits a bright green EL due to Ce3+ luminescent centers, being characteristic of parity allowed 5d-4f transitions. A brightness level of 500 cd/m2 and emission efficiency of 0.11 lm/W have been obtained under...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics