Γ–L–X mixed symmetry of nitrogen-induced states in GaAs[sub 1-x]N[sub x] probed by resonant Raman scattering

Seong, M. J.; Mascarenhas, A.; Geisz, J. F.
August 2001
Applied Physics Letters;8/27/2001, Vol. 79 Issue 9, p1297
Academic Journal
A resonant Raman scattering study near the nitrogen-induced E[sub +] state in GaAs[sub 1-x]N[sub x] at 80 K with special emphasis on all the zone-boundary phonons is used to investigate the full symmetry of the E[sub +] state. We have observed that various phonons at the L- and X-zone boundaries not only emerge as strong and sharp Raman features for excitations near the E[sub +] transition but also exhibit the same intensity resonance enhancement as observed for the zone center phonons, longitudinal-optical (Γ) and transverse-optical (Γ). Our data provide strong evidence of significant L and X components in the wave function of the nitrogen-induced E[sub +] state in GaAs[sub 1-x]N[sub x]. © 2001 American Institute of Physics.


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