Time-resolved electroabsorption measurement of the transient electron velocity overshoot in GaN

Wraback, M.; Shen, H.; Carrano, J. C.; Collins, C. J.; Campbell, J. C.; Dupuis, R. D.; Schurman, M. J.; Ferguson, I. T.
August 2001
Applied Physics Letters;8/27/2001, Vol. 79 Issue 9, p1303
Academic Journal
A femtosecond time-resolved electroabsorption technique employing an AlGaN/GaN heterojunction p–i–n diode with a p-type AlGaN window layer and a semitransparent p contact has been used to measure the transient electron velocity overshoot in GaN. A peak transient electron velocity of 7.25×10[sup 7] cm/s within the first 200 fs after photoexcitation has been observed at a field of 320 kV/cm. The increase in electron transit time across the device with increasing field beyond 320 kV/cm provides experimental evidence for a negative differential resistivity region of the steady-state velocity-field characteristic in this high field range. © 2001 American Institute of Physics.


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