Dislocation-free GaAs[sub y]P[sub 1-x-y]N[sub x]/GaP[sub 0.98]N[sub 0.02] quantum-well structure lattice- matched to a Si substrate

Fujimoto, Yasuhiro; Yonezu, Hiroo; Utsumi, Atsushi; Momose, Kenji; Furukawa, Yuzo
August 2001
Applied Physics Letters;8/27/2001, Vol. 79 Issue 9, p1306
Academic Journal
We report that a lattice-matched and dislocation-free GaAs[sub y]P[sub 1-x-y]N[sub x]/GaP[sub 0.98]N[sub 0.02] quantum-well (QW) structure can be grown on a Si substrate. A two-dimensional growth mode was maintained during growth of all the layers. It was confirmed that the QW structure was lattice-matched to the Si substrate from the lattice constant measured by x-ray diffraction. A cross-sectional image taken by transmission electron microscopy revealed that no threading dislocations or misfit dislocations were observed at the QW structure. © 2001 American Institute of Physics.


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