TITLE

Indication of ferromagnetism in molecular-beam-epitaxy-derived N-type GaMnN

AUTHOR(S)
Overberg, Mark E.; Abernathy, Cammy R.; Pearton, Stephen J.; Theodoropoulou, Nikoleta A.; McCarthy, Kevin T.; Hebard, Arthur F.
PUB. DATE
August 2001
SOURCE
Applied Physics Letters;8/27/2001, Vol. 79 Issue 9, p1312
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Growth by molecular-beam epitaxy of the dilute magnetic alloy GaMnN is reported. The GaMnN contains 7.0% Mn as determined by Auger electron spectroscopy, and is single phase as determined by x-ray diffraction and reflection high-energy electron diffraction. Both magnetic and magnetotransport data are reported. The results show the anomalous Hall effect, negative magnetoresistance, and magnetic hysteresis at 10 K, indicating that Mn is incorporating into the GaN and forming the ferromagnetic semiconductor GaMnN. At 25 K the anomalous Hall term vanishes, indicating a Curie temperature between 10 and 25 K. © 2001 American Institute of Physics.
ACCESSION #
5045900

 

Related Articles

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics