GaN metal–semiconductor–metal photodetectors grown on lithium gallate substrates by molecular-beam epitaxy

Seo, S. W.; Lee, K. K.; Kang, Sangbeom; Huang, S.; Doolittle, William A.; Jokerst, N. M.; Brown, A. S.
August 2001
Applied Physics Letters;8/27/2001, Vol. 79 Issue 9, p1372
Academic Journal
The growth, fabrication, and characterization of ultraviolet metal–semiconductor–metal (MSM) GaN photodetectors grown on LiGaO[sub 2] by molecular-beam epitaxy are reported herein. GaN/LiGaO[sub 2] material with dislocation densities of approximately 10[sup 8] cm[sup -2] and x-ray diffraction (00.4) full width at half maximum of 75 arcsec results in MSMs showing high responsivity, 0.105 A/W, at a reverse bias voltage of 20 V at 308 nm, and low dark currents of 7.88 pA at a 60 V reverse bias. Given the etch selectivity of the GaN/LiGaO[sub 2] system and the excellent performance of these devices, GaN device integration onto alternative substrates appears promising. © 2001 American Institute of Physics.


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