Longitudinal optic phonon–plasmon coupling in δ-doped metamorphic InAlAs/InGaAs high-electron-mobility transistor structures on GaAs substrates

Jiang, C. P.; Huang, Z. M.; Li, Z. F.; Yu, J.; Guo, S. L.; Lu, W.; Chu, J. H.; Cui, L. J.; Zeng, Y. P.; Zhu, Z. P.; Wang, B. Q.
August 2001
Applied Physics Letters;8/27/2001, Vol. 79 Issue 9, p1375
Academic Journal
InAlAs/InGaAs metamorphic high-electron-mobility transistor structures with different spacer layers on GaAs substrates are characterized by Raman measurements. The influence of In[sub 0.52]Al[sub 0.48]As spacer thickness on longitudinal optic phonon–plasmon coupling is investigated. It is found that the intensity of GaAs-like longitudinal optic phonon, which couples with collective intersubband transitions of two-dimensional electron gas, is strongly affected by the different subband energy spacings, subband electron concentrations, and wave function distributions, which are determined by different spacer thicknesses. © 2001 American Institute of Physics.


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