Suppression of concentration quenching of Er-related luminescence in Er-doped GaN

Shaoqiang Chen; Dierre, Benjamin; Woong Lee; Sekiguchi, Takashi; Tomita, Shigeo; Kudo, Hiroshi; Akimoto, Katsuhiro
May 2010
Applied Physics Letters;5/3/2010, Vol. 96 Issue 18, p181901
Academic Journal
Erbium-doped GaN with different doping concentrations were grown by ammonia-source molecular beam epitaxy. The intra-4f-shell transitions related green luminescence were observed by both photoluminescence (PL) and cathodoluminescence (CL) measurements. It was found that concentration quenching of Er-related luminescence was observed in PL measurements while not in CL measurements. The different excitation and relaxation processes are suggested as the cause of the concentration quenching characteristics between PL and CL. The strong Er-related CL intensity in highly doped GaN demonstrates that high energy excitation is a promising approach to suppress the concentration quenching in Er-doped GaN.


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