TITLE

Effect of total pressure on the formation and size evolution of silicon quantum dots in silicon nitride films

AUTHOR(S)
Rezgui, B.; Sibai, A.; Nychyporuk, T.; Lemiti, M.; Bremond, G.; Maestre, D.; Palais, O.
PUB. DATE
May 2010
SOURCE
Applied Physics Letters;5/3/2010, Vol. 96 Issue 18, p183105
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The size of silicon quantum dots (Si QDs) embedded in silicon nitride (SiNx) has been controlled by varying the total pressure in the plasma-enhanced chemical vapor deposition (PECVD) reactor. This is evidenced by transmission electron microscopy and results in a shift in the light emission peak of the quantum dots. We show that the luminescence in our structures is attributed to the quantum confinement effect. These findings give a strong indication that the quality (density and size distribution) of Si QDs can be improved by optimizing the deposition parameters which opens a route to the fabrication of an all-Si tandem solar cell.
ACCESSION #
50309203

 

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