Effect of total pressure on the formation and size evolution of silicon quantum dots in silicon nitride films

Rezgui, B.; Sibai, A.; Nychyporuk, T.; Lemiti, M.; Bremond, G.; Maestre, D.; Palais, O.
May 2010
Applied Physics Letters;5/3/2010, Vol. 96 Issue 18, p183105
Academic Journal
The size of silicon quantum dots (Si QDs) embedded in silicon nitride (SiNx) has been controlled by varying the total pressure in the plasma-enhanced chemical vapor deposition (PECVD) reactor. This is evidenced by transmission electron microscopy and results in a shift in the light emission peak of the quantum dots. We show that the luminescence in our structures is attributed to the quantum confinement effect. These findings give a strong indication that the quality (density and size distribution) of Si QDs can be improved by optimizing the deposition parameters which opens a route to the fabrication of an all-Si tandem solar cell.


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