TITLE

Efficient charge injection from a high work function metal in high mobility n-type polymer field-effect transistors

AUTHOR(S)
Caironi, M.; Newman, C.; Moore, J. R.; Natali, D.; Yan, H.; Facchetti, A.; Sirringhaus, H.
PUB. DATE
May 2010
SOURCE
Applied Physics Letters;5/3/2010, Vol. 96 Issue 18, p183303
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We demonstrate efficient electron injection from a high work function metal in staggered transistors based on the high mobility poly{[N,N′-bis(2-octyldodecyl)-naphthalene-1,4,5,8-bis(dicarboximide)-2,6-diyl]-alt-5,5′-(2,2′-bithiophene)}. Channel length scaling shows that the linear mobility for electrons remains higher than 0.1 cm2/V s when reducing the channel length to a few micrometers. Field-enhanced injection favors downscaling at a fixed lateral voltage and reduces the contact resistance to 11 kΩ cm at high gate voltages for channels of only a few micrometers. The contacts are asymmetric, with the source contribution dominating the overall resistance, consistent with an injection limited regime rather than bulk-limited as generally found in staggered transistors.
ACCESSION #
50309200

 

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