Efficient charge injection from a high work function metal in high mobility n-type polymer field-effect transistors

Caironi, M.; Newman, C.; Moore, J. R.; Natali, D.; Yan, H.; Facchetti, A.; Sirringhaus, H.
May 2010
Applied Physics Letters;5/3/2010, Vol. 96 Issue 18, p183303
Academic Journal
We demonstrate efficient electron injection from a high work function metal in staggered transistors based on the high mobility poly{[N,N′-bis(2-octyldodecyl)-naphthalene-1,4,5,8-bis(dicarboximide)-2,6-diyl]-alt-5,5′-(2,2′-bithiophene)}. Channel length scaling shows that the linear mobility for electrons remains higher than 0.1 cm2/V s when reducing the channel length to a few micrometers. Field-enhanced injection favors downscaling at a fixed lateral voltage and reduces the contact resistance to 11 kΩ cm at high gate voltages for channels of only a few micrometers. The contacts are asymmetric, with the source contribution dominating the overall resistance, consistent with an injection limited regime rather than bulk-limited as generally found in staggered transistors.


Related Articles

  • A prototype protein field-effect transistor. Yau, Siu-Tung; Qian, Guoguang // Applied Physics Letters;3/7/2005, Vol. 86 Issue 10, p103508 

    Electrical conduction in a macroscopic assembly of apoferritin, a non-redox protein, has been characterized using a three-terminal prototype device. Our result shows an ohmic conduction near zero bias. The ohmic conduction can be controlled using an electric field applied to the protein assembly...

  • Remote phonon scattering in field-effect transistors with a high κ insulating layer. Laikhtman, B.; Solomon, P. M. // Journal of Applied Physics;Jan2008, Vol. 103 Issue 1, p014501 

    In this paper a remote phonon scattering of channel electrons in a field-effect transistor (FET) with a high dielectric constant (κ) insulator in between the gate and the channel is studied theoretically. The spectrum of phonons confined in the high κ layer and its modification by the gate...

  • Simulation of gate lag and current collapse in gallium nitride field-effect transistors. Braga, N.; Mickevicius, R.; Gaska, R.; Shur, M. S.; Asif Khan, M.; Simm, G. // Applied Physics Letters;11/15/2004, Vol. 85 Issue 20, p4780 

    Results of two-dimensional numerical simulations of gate lag and current collapse in GaN heterostructure field-effect transistors are presented. Simulation results clearly show that current collapse takes place only if an enhanced trapping occurs under the gate edges. Hot electrons play an...

  • Trapped charge induced gate oxide breakdown. Neugroschel, Arnost; Wang, Lingquan; Bersuker, Gennadi // Journal of Applied Physics;9/15/2004, Vol. 96 Issue 6, p3388 

    We investigate the physical mechanisms of breakdown in 21 Ã… thick silicon dioxide gate oxides in n-channel and p-channel metal-oxide-semiconductor field-effect transistors. The oxide breakdown investigation is based on the direct measurement of the stress-induced charge trapped in the oxide...

  • 1/f noise in GaN/AlGaN heterostructure field-effect transistors in high magnetic fields at 300 K. Rumyantsev, S. L.; Shur, M. S.; Dyakonova, N.; Knap, W.; Meziani, Y.; Pascal, F.; Hoffman, A.; Hu, X.; Fareed, O.; Bilenko, Yu.; Gaska, R. // Journal of Applied Physics;10/1/2004, Vol. 96 Issue 7, p3845 

    1/f noise in AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors has been measured at 300 K in strong magnetic fields up to 10 T. The devices exhibited strong geometric magnetoresistance. The magnetic-field dependence of the 1/f noise shows that fluctuations of the...

  • Nanoampere charge pump by single-electron ratchet using silicon nanowire metal-oxide-semiconductor field-effect transistor. Fujiwara, Akira; Nishiguchi, Katsuhiko; Ono, Yukinori // Applied Physics Letters;1/28/2008, Vol. 92 Issue 4, p042102 

    Nanoampere single-electron pumping is presented at 20 K using a single-electron ratchet comprising silicon nanowire metal-oxide-semiconductor field-effect transistors. The ratchet features an asymmetric potential with a pocket that captures single electrons from the source and ejects them to the...

  • Studies of the degradation mechanism of organic light-emitting diodes based on tris(8-quinolinolate)aluminum Alq and 2-tert-butyl-9,10-di(2-naphthyl)anthracene TBADN. Jarikov, Viktor V.; Kondakov, Denis Y. // Journal of Applied Physics;Feb2009, Vol. 105 Issue 3, pN.PAG 

    Previously, radical cation of tris(8-quinolinolate)aluminum (Alq•+) has been associated with the instability of Alq films subjected to holes-only electrical current. Yet, the questions remain (i) whether Alq•+ is the primary source of the intrinsic degradation of bipolar organic...

  • Radiation and injection effects on metal-oxide-semiconductor devices using the gate-controlled-diode technique. Palumbo, Felix; Faigon, Adrian N.; Campabadal, Francesca // Journal of Applied Physics;12/15/2004, Vol. 96 Issue 12, p7591 

    Charge trapping and interface states generation by electrical stress and gamma photons (60Co) were studied on n-channel metal-oxide-semiconductor field-effect transistors, using the gate-controlled-diode technique. Creation of states during positive charge trapping and during its recombination...

  • Performance analysis of statistical samples of graphene nanoribbon tunneling transistors with line edge roughness. Luisier, Mathieu; Klimeck, Gerhard // Applied Physics Letters;6/1/2009, Vol. 94 Issue 22, p223505 

    Using a three-dimensional, atomistic quantum transport simulator based on the tight-binding method, we investigate statistical samples of single-gate graphene nanoribbon (GNR) tunneling field-effect transistors (TFETs) with different line edge roughness probabilities. We find that as the...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics