TITLE

Ellipsometric study of single-crystal γ-InSe from 1.5 to 9.2 eV

AUTHOR(S)
Choi, S. G.; Aspnes, D. E.; Fuchser, A. L.; Martinez-Tomas, C.; Sanjosé, V. Muñoz; Levi, D. H.
PUB. DATE
May 2010
SOURCE
Applied Physics Letters;5/3/2010, Vol. 96 Issue 18, p181902
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We report the component E[accent:_right_hook_over]⊥c⁁ of the pseudodielectric-function tensor <[variant_greek_epsilon](E)>=<[variant_greek_epsilon]1(E)>+i<[variant_greek_epsilon]2(E)> of γ-phase single-crystal InSe, obtained from 1.5 to 9.2 eV by vacuum-ultraviolet spectroscopic ellipsometry with the sample at room temperature. Overlayer artifacts were reduced as far as possible by measuring fresh surfaces prepared by cleavage. Accurate critical-point energies of observed structures were obtained by a combined method of spectral analysis.
ACCESSION #
50309190

 

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