Investigation of E1(LO) phonon-plasmon coupled modes and critical points in In1-xGaxN thin films by optical reflectance measurements

Thakur, J. S.; Dixit, A.; Danylyuk, Y. V.; Sudakar, C.; Naik, V. M.; Schaff, W. J.; Naik, R.
May 2010
Applied Physics Letters;5/3/2010, Vol. 96 Issue 18, p181904
Academic Journal
Low energy optical modes of molecular beam epitaxy-grown In1-xGaxN thin films with 0≤x≤0.6 are investigated using infrared reflectance measurements. We found that the reflectance of the films for wave vectors in the range from 600 to 800 cm-1 is determined by the high energy E1(LO)-plasmon coupled modes. In the higher energy regime of the UV-visible reflectance spectrum of InN, critical points with energies 4.75, 5.36, and 6.12 eV belonging to A and B structures are observed. The energies of these critical points increase with increasing values of x, similar to the band gap energy of these films.


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