Electron transport in rubrene single-crystal transistors

Bisri, Satria Zulkarnaen; Takenobu, Taishi; Takahashi, Tetsuo; Iwasa, Yoshihiro
May 2010
Applied Physics Letters;5/3/2010, Vol. 96 Issue 18, p183304
Academic Journal
We report a study of impurity effects on the electron transport of rubrene single crystals. A significant improvement of electron carrier mobility up to 0.81 cm2/V s is achieved by performing multiple purifications of single crystals and device aging inside an N2-filled glove box. The hole/electron mobility ratio obtained is in good agreement with the reported theoretical calculation, suggesting that the intrinsic electron transport of organic semiconductors is also exploitable in a manner similar to that of hole transport.


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