TITLE

Indium kinetics during the plasma-assisted molecular beam epitaxy of semipolar (11-22) InGaN layers

AUTHOR(S)
Das, A.; Magalhães, S.; Kotsar, Y.; Kandaswamy, P. K.; Gayral, B.; Lorenz, K.; Alves, E.; Ruterana, P.; Monroy, E.
PUB. DATE
May 2010
SOURCE
Applied Physics Letters;5/3/2010, Vol. 96 Issue 18, p181907
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We report on the growth kinetics of semipolar (11-22) InGaN layers by plasma-assisted molecular beam epitaxy. Similarly to (0001)-oriented InGaN, optimum growth conditions for this crystallographic orientation correspond to the stabilization of two atomic layers of In on the growing InGaN surface, and the limits of this growth window in terms of substrate temperature and In flux lie at same values for both polar and semipolar material. However, in semipolar samples, the incorporation of In is inhibited, even for growth temperatures within the Ga-limited regime of polar InGaN growth.
ACCESSION #
50309169

 

Related Articles

  • Nitrogen-induced hindering of In incorporation in InGaAsN. Rubini, S.; Bais, G.; Cristofoli, A.; Piccin, M.; Duca, R.; Nacci, C.; Modesti, S.; Carlino, E.; Martelli, F.; Franciosi, A.; Bisognin, G.; de Salvador, D.; Schiavuta, P.; Berti, M.; Drigo, A. V. // Applied Physics Letters;4/3/2006, Vol. 88 Issue 14, p141923 

    We compare the In content of quaternary InxGa1-xAs1-yNy and ternary InxGa1-xAs layers grown by plasma-assisted molecular beam epitaxy in similar conditions. Indium incorporation is found to decrease monotonically with increasing nitrogen content. The magnitude of the reduction strongly depends...

  • Features of the spatial distribution of indium in InGaN epitaxial layers grown by plasma-assisted molecular beam epitaxy. Jmerik, V.; Mizerov, A.; Shubina, T.; Plotnikov, D.; Zamoryanskaya, M.; Yagovkina, M.; Domracheva, Ya.; Sitnikova, A.; Ivanov, S. // Semiconductors;May2008, Vol. 42 Issue 5, p616 

    The processes leading to the formation of a spatially nonuniform distribution of indium in the In x Ga1 - x N layers with x = 0-0.6 grown by molecular beam epitaxy with plasma activation of nitrogen at relatively low growth temperatures (590�630�C) are studied. It is found that at low...

  • Kramers-Kronig Analysis of Infrared Reflectance Spectra for Quaternary InxAlyGa1-x-yN Alloy. Raof, N. H. Abd.; Ng, S. S.; Hassan, H. Abu; Hassan, Z. // AIP Conference Proceedings;7/7/2010, Vol. 1250 Issue 1, p337 

    In this paper, a Kramers-Kronig (KK) analysis of infrared (IR) reflectance spectrum of quaternary In0.01Al0.06Ga0.93N film grown by molecular beam epitaxy (MBE) is reported. The infrared measurement is performed in the reflection mode at an incident angle of 15° by Fourier transform infrared...

  • Effect of rapid thermal annealing on the noise properties of InAs/GaAs quantum dot structures. Arpatzanis, N.; Tsormpatzoglou, A.; Dimitriadis, C. A.; Song, J. D.; Choi, W. J.; Lee, J. I.; Charitidis, C. // Journal of Applied Physics;9/1/2007, Vol. 102 Issue 5, p054302 

    Self-assembled InAs quantum dots (QDs) were grown by molecular beam epitaxy (MBE) on n+-GaAs substrates, capped between 0.4 μm thick n-type GaAs layers with electron concentration of 1×1016 cm-3. The effect of rapid thermal annealing at 700 °C for 60 s on the noise properties of the...

  • Vacancy-type defects in InxGa1-xN alloys probed using a monoenergetic positron beam. Uedono, A.; Ishibashi, S.; Watanabe, T.; Wang, X. Q.; Liu, S. T.; Chen, G.; Sang, L. W.; Sumiya, M.; Shen, B. // Journal of Applied Physics;Jul2012, Vol. 112 Issue 1, p014507 

    Native defects in InxGa1-xN grown by plasma-assisted molecular beam epitaxy were probed by a monoenergetic positron beam. Doppler broadening spectra of the annihilation radiation were measured, and these were compared with results obtained using first-principles calculation. The defect...

  • Properties of MIS structures based on graded-gap HgCdTe grown by molecular beam epitaxy. Voitsekhovskii, A. V.; Nesmelov, S. N.; Dzyadookh, S. M.; Varavin, V. S.; Dvoretskii, S. A.; Mikhailov, N. N.; Sidorov, Yu. G.; Vasiliev, V. V. // Semiconductors;Nov2008, Vol. 42 Issue 11, p1298 

    The effect of near-surface graded-gap layers on the electrical characteristics of MIS structures fabricated based on heteroepitaxial Hg1 − x Cd x Te films grown by molecular beam epitaxy with a two-layer SiO2/Si3N4 insulator and anodic oxide film is studied experimentally. It is shown...

  • Defect-controlled growth of GaN nanorods on (0001)sapphire by molecular beam epitaxy. Cherns, D.; Meshi, L.; Griffiths, I.; Khongphetsak, S.; Novikov, S. V.; Farley, N. R. S.; Campion, R. P.; Foxon, C. T. // Applied Physics Letters;9/15/2008, Vol. 93 Issue 11, p111911 

    Transmission electron microscopy is used to reveal threading defects in single crystal c-oriented GaN nanorods grown on (0001)sapphire by molecular beam epitaxy. The defects are shown to be planar faults lying on {1010} planes and bounded by opposite partial screw...

  • High-reflectivity broadband distributed Bragg reflector lattice matched to ZnTe. Pacuski, W.; Kruse, C.; Figge, S.; Hommel, D. // Applied Physics Letters;5/11/2009, Vol. 94 Issue 19, p191108 

    We report on the realization of a high quality distributed Bragg reflector with both high and low refractive index layers lattice matched to ZnTe. Our structure is grown by molecular beam epitaxy and is based on binary compounds only. The high refractive index layer is made of ZnTe, while the...

  • Nanophononic thin-film filters and mirrors studied by picosecond ultrasonics. Lanzillotti-Kimura, N. D.; Perrin, B.; Fainstein, A.; Jusserand, B.; Lemaıître, A. // Applied Physics Letters;2/1/2010, Vol. 96 Issue 5, p053101 

    Optimized acoustic phonon thin-film filters are studied by picosecond ultrasonics. A broadband mirror and a color filter based on aperiodic multilayers were optimized to work in the subterahertz range, and grown by molecular beam epitaxy. Time resolved differential optical reflectivity...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics