Enhanced light extraction in light-emitting diodes with photonic crystal structure selectively grown on p-GaN

Chu-Young Cho; Se-Eun Kang; Ki Seok Kim; Sang-Jun Lee; Yong-Seok Choi; Sang-Heon Han; Gun-Young Jung; Seong-Ju Park
May 2010
Applied Physics Letters;5/3/2010, Vol. 96 Issue 18, p181110
Academic Journal
We report on the properties of green light-emitting diodes (LEDs) with a photonic crystal (PC) structure on p-GaN. A PC structure was fabricated by the selective area epitaxy of p-GaN using SiO2 nanopillars. The electrical characteristics of LEDs with PC were not degraded and the optical output power of green LEDs with PC was increased by 70% at 20 mA of injection current compared with that of conventional LEDs without PC. This enhancement of optical output power was attributed to the improvement in light extraction efficiency by the SiO2/p-GaN PC layer on p-GaN.


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