Crystallization and high temperature shape memory behavior of sputter-deposited NiMnCoIn thin films

Rios, S.; Karaman, I.; Zhang, X.
April 2010
Applied Physics Letters;4/26/2010, Vol. 96 Issue 17, p173102
Academic Journal
Amorphous Ni50Mn38Co6In6 films of 20 μm in thickness are fabricated using dc magnetron sputtering technique. Ex situ annealing studies demonstrate the crystallization at elevated temperature, and the retention of L10 martensite at room temperature. In situ annealing inside a transmission electron microscope reveals the crystallization process as well as the transformation to B2 austenite at elevated temperatures. Differential scanning calorimetry studies show the crystallization activation energy of ∼239 kJ/mol, a reversible martensitic phase transformation temperature of ∼350 °C, and a hysteresis of ∼75 °C.


Related Articles

  • Thermal conductivity of phase-change material Ge2Sb2Te5. Lyeo, Ho-Ki; Cahill, David G.; Lee, Bong-Sub; Abelson, John R.; Kwon, Min-Ho; Kim, Ki-Bum; Bishop, Stephen G.; Cheong, Byung-ki // Applied Physics Letters;10/9/2006, Vol. 89 Issue 15, p151904 

    The thermal conductivity of thin films of the phase-change material Ge2Sb2Te5 is measured in the temperature range of 27 °C≤T≤400 °C using time-domain thermoreflectance. From the low thermal conductivity of amorphous phase, the conductivity increases irreversibly with...

  • Mechanism of crystallization of oxygen-doped amorphous Ge1 Sb2 Te4 thin films. Rivera-Rodríguez, C.; Prokhorov, E.; Trapaga, G.; Morales-Sánchez, E.; Hernandez-Landaverde, M.; Kovalenko, Yu.; González-Hernández, J. // Journal of Applied Physics;7/15/2004, Vol. 96 Issue 2, p1040 

    The aim of this article is to study the mechanism of the amorphous-to-crystalline phase transformation in Ge1Sb2Te4 alloys doped by oxygen (in the range of 4-28 at %) using the electrical, optical, and x-ray measurements. Experimental results have shown that samples with oxygen in the range of...

  • Crystallization behavior of amorphous Alx(Ge2Sb2Te5)1-x thin films. Jae-Hee Seo; Ki-Ho Song; Hyun-Yong Lee // Journal of Applied Physics;Oct2010, Vol. 108 Issue 6, p064515 

    Crystallization properties of thermally deposited amorphous Alx(Ge2Sb2Te5)1-x (x=0.06 and 0.10) films were investigated. The crystallization was performed by both macroscopic thermal annealing and nanopulse laser illumination (λ=658 nm and beam diameter <2 μm). The Al0.10(Ge2Sb2Te5)0.90...

  • Characteristics of amorphous Ag0.1(Ge2Sb2Te5)0.9 thin film and its ultrafast crystallization. Song, Ki-Ho; Kim, Sung-Won; Seo, Jae-Hee; Lee, Hyun-Yong // Journal of Applied Physics;Nov2008, Vol. 104 Issue 10, p103516 

    An amorphous chalcogenide Ge2Sb2Te5 film is most commonly used for phase-change data storage, in which its small volume is switched between amorphous and crystalline states by local heating with short laser or current pulses. A speed of amorphous-to-crystalline phase transformation in Ge2Sb2Te5...

  • The effect of field cooling and field orientation on the martensitic phase transformation in a Ni[sub 2]MnGa single crystal. Chu, S.-Y.; Cramb, A.; De Graef, M.; Laughlin, D.; McHenry, M. E. // Journal of Applied Physics;5/1/2000, Vol. 87 Issue 9, p5777 

    The temperature and field dependence of the magnetization in a Ni[sub 2]MnGa single crystal was measured using a magnetometer with an applied field oriented in the [001] and [011] directions, respectively, of the parent cubic phase. It was found that the magnetic field magnitude and direction...

  • Thermally driven smoothening of molecular thin films: Structural transitions in n-alkane layers studied in real-time. Pithan, Linus; Meister, Eduard; Chenyu Jin; Weber, Christopher; Zykov, Anton; Sauer, Katrein; Brütting, Wolfgang; Riegler, Hans; Opitz, Andreas; Kowarik, Stefan // Journal of Chemical Physics;2015, Vol. 143 Issue 16, p1 

    We use thermal annealing to improve smoothness and to increase the lateral size of crystalline islands of n-tetratetracontane (TTC, C44H90) films. With in situ x-ray diffraction, we find an optimum temperature range leading to improved texture and crystallinity while avoiding an irreversible...

  • CRYSTALLIZATION PROCESS IN AMORPHOUS Sn-Te-Se THIN FILMS. Bhargava, A.; Kalla, Jaya; Suthar, B. // Chalcogenide Letters;Mar2010, Vol. 7 Issue 3, p175 

    The results obtained for the isothermal crystallization for a-SnTeSe thin films have been used to determine the expressions for the phase transformation rate in a non-isothermal regime. This formalism enables one to determine the apparent energies of the growth rate and nucleation rate using an...

  • The effect of pressure on martensitic phase transformations. Vaclav, PAIDAR; Andriy, OSTAPOVETS; Olivier, HARDOUIN DUPARC // Advances in Science & Technology;2013, Vol. 78, p13 

    Stability of the crystal structure is determined by the competition between attractive and repulsive interatomic forces. Using many-body exponential potentials it can be shown that the bcc structure corresponding to austenitic phases is more stable for low values of the q-parameter...

  • The effects of microstructure on crackling noise during martensitic transformation in Cu-Al-Ni. Faran, Eilon; Seiner, Hanus; Landa, Michal; Shilo, Doron // Applied Physics Letters;10/26/2015, Vol. 107 Issue 17, p1 

    Martensitic phase transformations often exhibit crackling noise response of the emitted energy. This type of behavior implies that the phase transformation proceeds through numerous events that do not exhibit any characteristic scale. On the other hand, the twinned microstructure along the phase...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics