Electron energy band alignment at the NiO/SiO2 interface

Afanas'ev, V. V.; Badylevich, M.; Houssa, M.; Stesmans, A.; Aggrawal, Gagan; Campbell, S. A.
April 2010
Applied Physics Letters;4/26/2010, Vol. 96 Issue 17, p172105
Academic Journal
Study of the NiO/SiO2 interface band diagram using optical absorption, photoconductivity, and internal photoemission measurements reveals that deposited Ni oxides have a band gap of 3.2±0.1 eV, with the top of the valence band at 5.3±0.1 eV below the conduction band of SiO2 and showing no measurable sensitivity to the oxygen surplus in the layer up to 20%. Annealing in a reducing ambient (forming gas) at 400 °C results in narrowing of the band gap and an up shift in the occupied electron state edge by ≈1 eV, which is tentatively associated with partial reduction in the NiO layer.


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